Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V, Enhancement Mode, Surface Mount, TO-263 Package IRF5305STRLPBF

Infineon IRF5305STRLPBF HEXFET Type P-Channel MOSFET offers a powerful solution tailored for high-efficiency electronic circuits requiring surface mount capabilities. Operating with a maximum continuous drain current of 31 A and a drain source voltage rating of up to 55 V, this device provides dependable performance for power management.

The enhancement mode channel allows for flexible control in various electronic designs. This MOSFET is packaged in the TO-263 (D2PAK) surface mount type, facilitating seamless integration into modern automated manufacturing and assembly lines.

Thermal performance is enhanced with the capability to dissipate up to 110 W of power and operate across a wide temperature range from -55°C minimum to +175°C maximum. The low maximum drain source resistance of 60 mΩ contributes to efficiency and reduced power loss during operation.

With a typical gate charge of 63 nC at Vgs and gate source voltage limits of -20 to +20 V, the MOSFET achieves rapid switching speeds and reliable gate control. Its compact form factor, measuring 4.83 mm in height, 10.67 mm in length, and 9.65 mm in width, makes it suitable for space-constrained electronic assemblies.

This MOSFET is particularly suited for industrial and commercial applications such as motor controls, power supply circuits, electronic switching, and energy management solutions. Its robust specifications ensure suitability in demanding environments within electrical and electronic systems.

Applications extend to industrial automation, HVAC systems, manufacturing processes, and renewable energy systems. Supports a maximum continuous drain current of 31 A for high power applications. Operates at a maximum drain source voltage of 55 V ensuring robust voltage handling.

Features enhancement channel mode for versatile circuit integration. Comes in a TO-263 package ideal for surface mount technology. Maximum power dissipation of 110 W supports efficient thermal management. Low maximum drain source resistance of 60 mΩ improves energy efficiency.

Designed to operate within a temperature range from -55°C to 175°C for reliability in harsh conditions. Has a typical gate charge of 63 nC enabling fast switching performance. Maximum gate source voltage rating of -20 to +20 V ensures safe gate control.

Compact dimensions with a height of 4.83 mm, length of 10.67 mm, and width of 9.65 mm. Explore a wide range of MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart for diverse industrial, laboratory, and manufacturing needs.