Vishay P-Channel MOSFET 20 V 13.4 A Enhancement Mode SOIC 8-Pin SI4403CDY-T1-GE3

Vishay SI4403CDY-T1-GE3 is a high-performance P-Channel MOSFET designed for efficient switching and power management in electronic circuits. Featuring a maximum continuous drain current of 13.4 amperes and a drain-source voltage rating of 20 volts, this device suits applications requiring reliable power handling within compact surface-mount packages.

Its enhancement mode operation with a low drain-source resistance of 20 milliohms ensures minimal power loss during conduction, enhancing efficiency. The SOIC 8-pin package allows for easy integration into dense PCB layouts.

Operating temperature range from -55°C to 150°C enables usage in industrial, power electronics, and consumer electronic applications exposed to varying thermal conditions. The typical gate charge of 60 nC facilitates fast switching operations, reducing switching losses.

The MOSFET features a maximum power dissipation of 5 watts and a gate-source voltage tolerance of -8 to +8 volts, allowing for robust gate driving capability. Its compact physical size - 5 mm length, 4 mm width, and 1.55 mm height - makes it suitable for space-constrained designs.

Enhancement mode P-Channel MOSFET with 20 V drain-source voltage rating. Continuous drain current of 13.4 A supports high current switching. Low on-resistance of 20 mΩ reduces conduction losses. Fast switching supported by 60 nC typical gate charge.

Wide operating temperature span from -55°C to 150°C. Compact SOIC 8-pin package ideal for surface mount applications. Manufactured in China by Vishay for global electronic markets.

This MOSFET is well suited for applications in power management, industrial electronics, and other fields requiring compact, reliable switching elements. Discover the full range of Vishay semiconductor components on EnvMart for practical design solutions.