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Vishay P-Channel MOSFET 19 A, 100 V Enhancement 3-Pin TO-220 IRF9540PBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF9540PBF
Width 4.7mm
Mount Type Through Hole
Series IRF9540
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 19A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 61nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -5V

Key Features

  • Type P channel with enhancement mode operation provides reliable switching.
  • Maximum power dissipation rated at 150 W ensures efficient thermal handling.
  • Pin count of 3 and through-hole mount type for easy PCB integration.
  • Low maximum drain source resistance of 200 mΩ minimizes conduction losses.
  • Operates within wide temperature range from -55°C to 175°C for diverse applications.
  • Typical gate charge of 61 nC at Vgs enhances switching speed and efficiency.
  • Maximum gate source voltage ±20 V offers strong gate control.
  • Forward voltage of -5 V suitable for various power management circuits.

Product Description

Vishay IRF9540PBF is a Type P-Channel MOSFET featuring enhancement mode operation designed for power electronics applications. It supports a maximum continuous drain current of 19 A and withstands drain source voltages up to 100 V, packaged in a 3-pin TO-220 through-hole mount for versatile PCB layouts.

This component excels in power dissipation with a maximum rating of 150 W, enabling sustained operation under demanding conditions. It maintains low conduction losses due to its maximum drain source resistance of 200 mΩ, optimizing efficiency in design.

The device operates reliably in harsh environmental conditions, covering an operational temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and manufacturing applications.

With a typical gate charge of 61 nC at a gate-source voltage, it provides an effective balance between switching speed and power consumption. The maximum gate source voltage tolerance of ±20 V offers enhanced control over device switching.

The TO-220 envelope dimensions are compact, measuring 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height, enabling compatibility with various form factor constraints. The forward voltage characteristic at -5 V supports its use in power supply and signal processing circuits.

Type P channel with enhancement mode operation provides reliable switching. Maximum continuous drain current of 19 A supports high current scenarios. Maximum drain source voltage of 100 V for robust voltage handling. Package includes 3-Pin TO-220 with through-hole mount type.

Maximum power dissipation rating of 150 W for thermal management. Operating temperature range from -55°C to 175°C suitable for industrial environments. Typical gate charge of 61 nC promotes efficient switching. Maximum gate source voltage ±20 V for strong gate control.

Compact dimensions with length 10.41 mm, width 4.7 mm, height 9.01 mm. Forward voltage of -5 V optimizes power applications.

This P-Channel MOSFET is ideal for use in industrial electronics, power management systems, manufacturing equipment, and automotive circuits requiring efficient high current and voltage handling.

Explore related MOSFET products and components for electronics projects and professional applications at EnvMart.

Vishay P-Channel MOSFET 19 A, 100 V Enhancement 3-Pin TO-220 IRF9540PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 19 A.

It can withstand a maximum drain source voltage of 100 V.

This MOSFET has a maximum power dissipation rating of 150 W.

The dimensions of the TO-220 package are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

The typical gate charge at gate-source voltage (Vgs) is 61 nC.

It operates within a temperature range from -55°C to 175°C.

The maximum gate source voltage is ±20 V.

The maximum drain source resistance is 200 mΩ.

This model features a pin count of 3.

It is a Type P channel MOSFET with enhancement mode operation.

The forward voltage characteristic is -5 V.

This component uses a through-hole mount type for easy PCB integration.

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