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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF9540PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF9540 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5V |
Vishay IRF9540PBF is a Type P-Channel MOSFET featuring enhancement mode operation designed for power electronics applications. It supports a maximum continuous drain current of 19 A and withstands drain source voltages up to 100 V, packaged in a 3-pin TO-220 through-hole mount for versatile PCB layouts.
This component excels in power dissipation with a maximum rating of 150 W, enabling sustained operation under demanding conditions. It maintains low conduction losses due to its maximum drain source resistance of 200 mΩ, optimizing efficiency in design.
The device operates reliably in harsh environmental conditions, covering an operational temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and manufacturing applications.
With a typical gate charge of 61 nC at a gate-source voltage, it provides an effective balance between switching speed and power consumption. The maximum gate source voltage tolerance of ±20 V offers enhanced control over device switching.
The TO-220 envelope dimensions are compact, measuring 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height, enabling compatibility with various form factor constraints. The forward voltage characteristic at -5 V supports its use in power supply and signal processing circuits.
Type P channel with enhancement mode operation provides reliable switching. Maximum continuous drain current of 19 A supports high current scenarios. Maximum drain source voltage of 100 V for robust voltage handling. Package includes 3-Pin TO-220 with through-hole mount type.
Maximum power dissipation rating of 150 W for thermal management. Operating temperature range from -55°C to 175°C suitable for industrial environments. Typical gate charge of 61 nC promotes efficient switching. Maximum gate source voltage ±20 V for strong gate control.
Compact dimensions with length 10.41 mm, width 4.7 mm, height 9.01 mm. Forward voltage of -5 V optimizes power applications.
This P-Channel MOSFET is ideal for use in industrial electronics, power management systems, manufacturing equipment, and automotive circuits requiring efficient high current and voltage handling.
Explore related MOSFET products and components for electronics projects and professional applications at EnvMart.
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