onsemi PowerTrench N-Channel MOSFET, 20 V, 1.7 A, Surface Mount 3-Pin SOT-23 Package FDN335N

onsemi FDN335N PowerTrench N-Channel MOSFET is a high-performance transistor designed for discrete semiconductor use in electronic components, power management, and switching applications. It operates as an enhancement mode N-channel MOSFET with a maximum continuous drain current rating of 1.7 A and a maximum drain-source voltage of 20 V, making it suitable for low-voltage electronic circuits in industrial, laboratory, and commercial environments.

This MOSFET comes in a compact 3-pin SOT-23 package, ideal for surface mounting and space-constrained PCB designs. The device features a low 70 mΩ maximum drain-source resistance which reduces conduction losses and enhances efficiency. It supports a maximum power dissipation of 500 mW and typical gate charge of 3.5 nC, facilitating fast switching with minimal energy loss.

Designed to operate reliably across a wide temperature range from -55°C to 150°C, this MOSFET is adaptable for harsh conditions, including automotive and industrial controls where temperature extremes are common. The maximum gate-source voltage rating of ±8 V ensures gate protection during operation.

The physical dimensions of 2.92 mm length, 1.4 mm width, and 940 µm height allow precise footprint placement for printed circuit boards. As a PowerTrench series device, it provides enhanced performance characteristics suitable for power-sensitive applications.

Use cases for this MOSFET include power switching in industrial automation, electronic circuitry in HVAC systems, instrumentation, signal processing, and renewable energy systems. Its reliable operation supports critical performance parameters necessary for high-quality electronics manufacturing.

Maximum continuous drain current of 1.7 A supports moderate power applications. Maximum drain-source voltage of 20 V ensures suitability for low voltage switching. Low drain-source resistance of 70 mΩ minimizes conduction losses.

Surface mount SOT-23 package enables compact PCB layouts. Wide operating temperature range from -55°C to 150°C allows use in various environments. Maximum power dissipation of 500 mW supports reliable thermal performance.

Typical gate charge of 3.5 nC allows efficient switching. Maximum gate-source voltage of ±8 V protects gate integrity. Physical dimensions provide precise PCB footprint. Explore more onsemi PowerTrench MOSFETs and related semiconductor components in EnvMart for your electronic component needs.