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onsemi PowerTrench Type P-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23 FDN360P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN360P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 6.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Optimized for efficient power switching in electronic circuits.
- Features a shielded-gate structure for low figure of merit (FOM).
- Supports fast switching with small gate charge and reverse recovery characteristics.
- Enhancement mode operation for improved control and efficiency.
- Compact surface-mount design suitable for space-constrained applications.
- Wide operating temperature range from -55°C to 150°C.
- Maximum power dissipation of 500 mW ensures effective thermal management.
Product Description
onsemi FDN360P PowerTrench Type P-Channel MOSFET, model FDN360P, is a high-performance discrete semiconductor designed for power switching applications at 30 V and 2 A ratings. It comes in a compact 3-pin SOT-23 surface-mount package, enabling its integration into various electronic devices requiring efficient power management.
The device incorporates advanced PowerTrench® technology with a shielded-gate structure that significantly lowers the figure of merit (FOM), enhancing system efficiency and power density. Its low gate charge and soft reverse recovery body diode contribute to minimal switching losses and electromagnetic interference, making it ideal for synchronous rectification in AC/DC power supplies.
This P-Channel enhancement mode MOSFET supports a maximum continuous drain current of 2 A and a maximum drain-source voltage of 30 V. It operates reliably across a wide temperature spectrum from -55°C up to 150°C, with a maximum power dissipation rating of 500 mW for thermal robustness.
The device’s compact dimensions (2.92 mm length, 1.4 mm width, and 940 µm height) make it suitable for modern compact electronics. Typical gate charge at Vgs is 6.2 nC, with a maximum gate-source voltage rating of ±20 V. The maximum drain-source resistance is 80 mΩ, balancing conduction efficiency and thermal performance.
Optimized power switching capabilities via PowerTrench® design. Shielded-gate structure for superior charge balance and fast switching. Surface-mount SOT-23 package ensuring easy PCB integration. Wide operating temperature and voltage range for diverse applications.
Reliable forward voltage and body diode characteristics reduce snubber components.
Applications include industrial power management, consumer electronics, automotive electronics non-compliant with automotive standard, and other power conversion systems benefitting from efficient low-voltage MOSFET switching. The device’s compact size and performance make it an excellent choice for enhancing the efficiency of power electronic designs.
Explore more components in the Semiconductor and MOSFET categories on EnvMart to find compatible and complementary devices suited for your application needs.
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Frequently Asked Questions
The FDN360P MOSFET supports a maximum continuous drain current of 2 A.
This model has a maximum drain-source voltage rating of 30 V.
The typical gate charge at Vgs for the FDN360P is 6.2 nC.
The dimensions of the FDN360P are 2.92 mm in length, 1.4 mm in width, and 940 µm in height.
The maximum power dissipation rating for the FDN360P is 500 mW.
This model operates reliably across a wide temperature range from -55°C to 150°C.
The FDN360P comes in a compact 3-pin SOT-23 surface-mount package.
The maximum drain-source resistance for the FDN360P is 80 mΩ.
The channel type of the FDN360P is P-Channel.
The maximum gate-source voltage rating for the FDN360P is ±20 V.
The FDN360P is suitable for applications in industrial power management, consumer electronics, and automotive electronics non-compliant with automotive standards.
The FDN360P utilizes PowerTrench® technology with a shielded-gate structure to enhance efficiency and power density.
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