onsemi PowerTrench Type P-Channel MOSFET 4.4 A 100 V Enhancement 8-Pin WDFN FDMC86139P

onsemi FDMC86139P PowerTrench Type P-Channel MOSFET is a high-efficiency transistor designed for electronic applications requiring reliable power switching. This device supports a maximum continuous drain current of 4.4 A and a drain-source voltage rating of 100 V. It is housed in a compact 8-pin WDFN surface mount package measuring 3.3 mm length and width, with a height of 0.725 mm, making it suitable for space-constrained circuit boards.

The enhancement mode channel and the advanced PowerTrench technology reduce gate charge to 16 nC, allowing fast switching and high system efficiency. The MOSFET features a low maximum drain-source resistance of 104 mΩ to minimize losses during conduction. An operating temperature range from -55°C to 150°C enables usage in diverse environmental conditions.

This MOSFET is optimized for synchronous rectification in AC/DC power supplies and offers soft reverse recovery body diode performance that can eliminate snubber circuits or enable the replacement of higher voltage MOSFETs. The device's maximum power dissipation of 40 W makes it suitable for moderate power electronic applications in industrial, electronic manufacturing, and power management systems.

With a maximum gate-source voltage of -25 V to +25 V and a forward voltage drop of -1.3 V, this component offers reliable and versatile operation. Its surface mounting and 8-pin configuration support complex circuit requirements without compromising size.

This MOSFET houses an enhancement mode P-channel for effective power switching. The 8-pin WDFN compact package facilitates PCB space savings and integration. PowerTrench technology enhances switching speed and device efficiency.

Body diode with soft reverse recovery improves switching behavior and system reliability. The device withstands wide operating temperatures, enhancing durability. Low gate charge results in reduced switching losses for power optimization.

Maximum power dissipation rating is 40 W suitable for multiple electronic uses. Stable performance with up to 100 V drain-source voltage and 4.4 A drain current. Forward voltage of -1.3 V supports efficient device operation within circuits.

onsemi's FDMC86139P MOSFET is ideal for industrial and electronic component applications in power management, automotive electronics, and surface mounting environments. It offers a combination of compact size, reliable switching, and robust thermal performance. Explore more MOSFETs and semiconductor components on EnvMart for comprehensive electronic solutions.