onsemi PowerTrench Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, Surface Mount, 3-Pin SOT-23 Package FDN358P

onsemi FDN358P PowerTrench Type P-Channel MOSFET is a high efficiency, low gate charge discrete semiconductor device designed for high-performance switching applications. It supports continuous drain current up to 1.5 A and maximum drain-source voltage of 30 V, making it suitable for low to moderate power circuits.

PowerTrench MOSFETs employ advanced shielded-gate technology that optimizes charge balance, resulting in significantly lower figure of merit (FOM) compared to previous MOSFET generations. The device includes a soft reverse recovery body diode, which improves switching performance and can eliminate the need for external snubber circuitry.

Encapsulated in a compact SOT-23 3-pin surface-mount package, the FDN358P offers a small footprint ideal for space-constrained industrial, commercial, and consumer electronics. The MOSFET operates reliably in a wide temperature range from -55°C to 150°C, making it suitable for harsh environments including industrial control and power management modules.

Typical applications include synchronous rectification in AC/DC power supplies, DC-DC converters, and general purpose switching in embedded systems. The device has a maximum power dissipation of 500 mW and a maximum gate-source voltage rating of ±20 V for reliable switching control.

Key physical dimensions are 2.92 mm length, 1.4 mm width, and 940 μm height, facilitating PCB layout flexibility and compact designs. Optimized PowerTrench technology reduces switching losses and improves efficiency. Soft body diode characteristic reduces electromagnetic interference and board component count.

Compact SOT-23 package suitable for automated surface mount assembly. Wide temperature range ensures durability in industrial and commercial environments. Low gate charge supports high-speed switching applications. Designed for enhancement mode P-channel operation in various power applications.

Reliable operation supported by ±20 V maximum gate-source voltage rating. Applications include power supplies, synchronous rectifiers, and DC-DC converters. Small device footprint aids in miniaturization of power management hardware.

This product belongs to the MOSFET category in the semiconductor industry segment. It is engineered for industrial electronics, power management systems, and embedded electronics, delivering efficient and reliable performance.

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