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Infineon HEXFET N-Channel MOSFET, 140 A Drain Current, 30 V Drain-Source Voltage, 3-Pin TO-263 Package IRL3803STRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.88mm |
| Length | 10.67mm |
| Model | IRL3803STRLPBF |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features a low maximum drain-source resistance of 9 milliohms for efficient switching.
- Capable of dissipating up to 200 watts of power, suitable for high current applications.
- Operates reliably from -55°C up to 175°C for broad thermal performance.
- Designed with a planar cell structure optimized for switching applications below specified voltage.
- Compatible with surface mount technology for versatile PCB assembly.
- Includes a typical gate charge of 140 nanocoulombs at specified gate voltage.
- Maximum gate-source voltage rating is 20 volts, ensuring gate circuit protection.
- Fits industrial, automotive (non-automotive standard), and general electronic applications.
Product Description
Infineon IRL3803STRLPBF HEXFET N-Channel MOSFET is engineered for high-current, low-voltage switching applications with a maximum continuous drain current rating of 140 A and a maximum drain-source voltage of 30 V. Packaged in a robust 3-pin TO-263 surface mount package, this MOSFET is ideal for industrial power management, automotive electronics, and commercial semiconductor use.
The device incorporates a planar cell structure that provides enhanced efficiency and enables optimized switching performance for power applications below its voltage rating. Its low maximum drain-source resistance of 9 milliohms contributes to minimal conduction losses, supporting energy-efficient designs.
With a maximum power dissipation capacity of 200 W, the IRL3803STRLPBF can handle significant thermal loads, supported by its broad operating temperature range from -55°C to 175°C. The gate charge of 140nC at a specified gate voltage enables responsive switching, while its maximum gate-source voltage of 20 V ensures reliable and protected gate operation.
The physical size, with dimensions of 10.67 mm in length, 4.83 mm in width, and 15.88 mm in height, makes it suitable for compact system layouts. Although not certified for automotive standards, it is frequently employed in various electronic applications requiring durable and efficient power switching.
Low Rds(on) for reduced power loss and heat generation. High current and power handling capability for robust performance. Wide operating temperature range for versatility in harsh environments. Planar cell structure optimized for switching efficiency.
Surface mount TO-263 package for easy PCB integration. Reliable gate voltage and charge characteristics for precise control.
This HexFET N-Channel MOSFET is suitable for use in industrial power supplies, motor control circuits, and other high current switching applications requiring compact and efficient semiconductor solutions. Explore similar Infineon HEXFET MOSFETs in the EnvMart electronics category for optimized component selection.
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Frequently Asked Questions
The maximum continuous drain current for this model is 140 A.
This N-Channel MOSFET has a maximum drain-source voltage rating of 30 V.
It can dissipate up to 200 watts of power, making it suitable for high current applications.
The dimensions of the TO-263 package are 10.67 mm in length, 4.83 mm in width, and 15.88 mm in height.
The typical gate charge for this model is 140 nanocoulombs at the specified gate voltage.
The maximum gate-source voltage rating is 20 V, ensuring gate circuit protection.
This unit operates reliably from -55°C to 175°C, providing broad thermal performance.
The maximum drain-source resistance is 9 milliohms, contributing to efficient switching.
It is designed for surface mount technology, allowing for versatile PCB assembly.
It is suitable for industrial power management, automotive electronics, and general electronic applications requiring efficient power switching.
This model features an N-channel configuration, optimized for switching applications.
This unit is part of the HEXFET series, known for its high-current capabilities.
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