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onsemi SuperFET N-Channel MOSFET 20A 600V Enhancement Mode 3-Pin TO-263 FCB20N60TM

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onsemi SuperFET N-Channel MOSFET 20A 600V Enhancement Mode 3-Pin TO-263 FCB20N60TM

Name: onsemi SuperFET N-Channel MOSFET 20A 600V Enhancement Mode 3-Pin TO-263 FCB20N60TM
Brand: onsemi
SKU: 207528
Price: 4.8 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.83mm
Length	9.65mm
Model	FCB20N60TM
Width	9.65mm
Mount Type	Surface
Series	SuperFET
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	190mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	208W
Typical Gate Charge Qg @ Vgs	75nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.4V

Key Features

High voltage rating of 600 V suitable for power switching.
Maximum continuous drain current of 20 A for efficient conduction.
SuperFET series provides low on-resistance of 190 milliohm.
Compact 3-pin TO-263 surface mount package for PCB integration.
Supports maximum power dissipation of 208 W for thermal reliability.
Typical gate charge of 75 nC minimizes switching losses.
Wide operating temperature range from -55°C to 150°C.
Enhanced body diode performance suitable for SMPS and industrial use.

Product Description

onsemi FCB20N60TM is a high-performance SuperFET N-Channel MOSFET transistor housed in a three-pin TO-263 surface mount package. Designed for demanding power electronics applications, it supports a continuous drain current of 20 A and a maximum drain-source voltage of 600 V. Its enhancement mode channel operation, low drain-source resistance (190mΩ), and maximum power dissipation of 208 W make it ideal for high efficiency and robust switching.

This MOSFET is engineered with advanced charge balance technology, delivering superior switching performance with a typical gate charge of 75 nC at Vgs. It withstands gate-source voltages up to ±30 V, ensuring strong drive capability and reliability. With a wide temperature tolerance from -55°C to 150°C, it is suitable for harsh industrial environments.

The SuperFET series is commonly used in AC-DC Switch Mode Power Supplies (SMPS), server power supplies, telecom equipment, industrial power supplies, uninterruptible power supplies (UPS), energy storage systems (ESS), solar inverters, and lighting control systems. Its efficient switching and low conduction losses help optimize system power density and reliability.

This device meets the requirements for surface mounting on printed circuit boards, ensuring compact design and ease of assembly. The 3-pin TO-263 package features dimensions of 9.65mm length, 9.65mm width, and 4.83mm height.

High voltage rating of 600 V suitable for power switching. Maximum continuous drain current of 20 A for efficient conduction. SuperFET series provides low on-resistance of 190 milliohm. Compact 3-pin TO-263 surface mount package for PCB integration.

Supports maximum power dissipation of 208 W for thermal reliability. Typical gate charge of 75 nC minimizes switching losses. Wide operating temperature range from -55°C to 150°C. Enhanced body diode performance suitable for SMPS and industrial use.

Widely used in industrial, telecommunications, data center power supplies, HVAC, renewable energy inverters, and manufacturing automation, this MOSFET delivers reliability and performance in high power density designs.

Explore a broad range of semiconductor components and power MOSFETs like the onsemi FCB20N60TM within the EnvMart catalog for your electronics design and manufacturing needs.

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Frequently Asked Questions

The maximum continuous drain current of this model is 20 A, allowing for efficient conduction in power applications.

This MOSFET supports a maximum drain-source voltage of 600 V, making it suitable for high voltage power switching applications.

The typical gate charge for the FCB20N60TM is 75 nC, which helps minimize switching losses during operation.

The dimensions of the TO-263 package are 9.65 mm in length, 9.65 mm in width, and 4.83 mm in height.

It operates within a wide temperature range from -55°C to 150°C, suitable for harsh industrial environments.

The maximum power dissipation for this model is 208 W, ensuring thermal reliability in high power applications.

The on-resistance of the FCB20N60TM is 190 milliohm, contributing to its efficiency in power switching.

This model features an N-channel enhancement mode, which is common for power switching applications.

The maximum gate-source voltage for the FCB20N60TM is ±30 V, providing strong drive capability and reliability.

The SuperFET series, including this model, is commonly used in applications such as AC-DC switch mode power supplies, telecom equipment, and renewable energy inverters.

The TO-263 package has a pin count of 3, facilitating easy surface mounting on printed circuit boards.

This MOSFET is manufactured in India, ensuring a specific origin for sourcing considerations.