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onsemi PowerTrench Type P-Channel MOSFET 4 A, 30 V Enhancement, 6-Pin SOT-23 FDC658P

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model FDC658P
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 50mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 8nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Features low gate charge with 8 nC typical at Vgs enhancing switching performance.
  • Supports enhancement mode operation with maximum drain-source resistance of 50 mΩ.
  • Operates reliably over a wide temperature range from -55°C to 150°C.
  • Designed with a soft reverse recovery body diode enabling efficient synchronous rectification.
  • Maximum power dissipation rating of 1.6 W for robust thermal performance.
  • Maximum gate-source voltage rating of ±20 V ensures device protection.

Product Description

onsemi FDC658P PowerTrench Type P-Channel MOSFET is designed for efficient power switching in electronic circuits, providing a continuous drain current of 4 A and a drain-source voltage capability of 30 V in a compact SOT-23 surface mount package.

This transistor utilizes the PowerTrench technology, optimizing system efficiency and power density by combining low gate charge and a soft reverse recovery body diode which contribute to fast switching performance especially for synchronous rectification in AC/DC power supplies.

The device operates in enhancement mode with a low drain-source resistance of 50 mΩ, ensuring minimal power losses. It supports a broad operating temperature range from -55°C to 150°C, making it suitable for various industrial and commercial applications.

The compact 6-pin SOT-23 package with dimensions 3 mm length, 1.7 mm width, and 1 mm height allows for easy surface mounting on printed circuit boards where space is limited.

Additional ratings include a maximum gate-source voltage of ±20 V and a forward voltage of -1.2 V. The maximum power dissipation of 1.6 W aids in thermal management under demanding operational conditions.

Features low gate charge with 8 nC typical at Vgs enhancing switching performance. Supports enhancement mode operation with maximum drain-source resistance of 50 mΩ. Operates reliably over a wide temperature range from -55°C to 150°C.

Designed with a soft reverse recovery body diode enabling efficient synchronous rectification. Compact dimensions: 3 mm length, 1.7 mm width, and 1 mm height for surface-mount applications. Maximum power dissipation rating of 1.6 W for robust thermal performance.

Maximum gate-source voltage rating of ±20 V ensures device protection.

This MOSFET finds applications spanning industrial power management, consumer electronics power supplies, automotive systems that do not require automotive certification, and other commercial electronic devices demanding efficient P-channel switching solutions.

Explore more components and PowerTrench MOSFETs in the semiconductor category on EnvMart for a broad selection of power management solutions.

onsemi PowerTrench Type P-Channel MOSFET 4 A, 30 V Enhancement, 6-Pin SOT-23 FDC658P
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Frequently Asked Questions

The maximum continuous drain current for this model is 4 A.

This unit has a maximum drain-source voltage capability of 30 V.

The typical gate charge at Vgs is 8 nC, which enhances switching performance.

The SOT-23 package dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height.

The maximum power dissipation rating is 1.6 W, aiding in thermal management.

It operates reliably over a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage rating is ±20 V, ensuring device protection.

This model features a Type P channel, supporting enhancement mode operation.

The maximum drain-source resistance for this unit is 50 mΩ.

It is suitable for industrial power management, consumer electronics power supplies, and automotive systems that do not require automotive certification.

This MOSFET has a pin count of 6.

The forward voltage for this model is -1.2 V.

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