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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC658P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
onsemi FDC658P PowerTrench Type P-Channel MOSFET is designed for efficient power switching in electronic circuits, providing a continuous drain current of 4 A and a drain-source voltage capability of 30 V in a compact SOT-23 surface mount package.
This transistor utilizes the PowerTrench technology, optimizing system efficiency and power density by combining low gate charge and a soft reverse recovery body diode which contribute to fast switching performance especially for synchronous rectification in AC/DC power supplies.
The device operates in enhancement mode with a low drain-source resistance of 50 mΩ, ensuring minimal power losses. It supports a broad operating temperature range from -55°C to 150°C, making it suitable for various industrial and commercial applications.
The compact 6-pin SOT-23 package with dimensions 3 mm length, 1.7 mm width, and 1 mm height allows for easy surface mounting on printed circuit boards where space is limited.
Additional ratings include a maximum gate-source voltage of ±20 V and a forward voltage of -1.2 V. The maximum power dissipation of 1.6 W aids in thermal management under demanding operational conditions.
Features low gate charge with 8 nC typical at Vgs enhancing switching performance. Supports enhancement mode operation with maximum drain-source resistance of 50 mΩ. Operates reliably over a wide temperature range from -55°C to 150°C.
Designed with a soft reverse recovery body diode enabling efficient synchronous rectification. Compact dimensions: 3 mm length, 1.7 mm width, and 1 mm height for surface-mount applications. Maximum power dissipation rating of 1.6 W for robust thermal performance.
Maximum gate-source voltage rating of ±20 V ensures device protection.
This MOSFET finds applications spanning industrial power management, consumer electronics power supplies, automotive systems that do not require automotive certification, and other commercial electronic devices demanding efficient P-channel switching solutions.
Explore more components and PowerTrench MOSFETs in the semiconductor category on EnvMart for a broad selection of power management solutions.
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