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DiodesZetex N-Channel MOSFET 1.4 A 100 V Enhancement 3-Pin SOT-89 ZXMN10A07ZTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | ZXMN10A07ZTA |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | ZXMN10A07Z |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.4A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 700mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.6W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 950mV |
Key Features
- Designed for surface mounting with 3 pins for efficient PCB integration.
- Enhancement mode channel providing stable and reliable operation.
- Maximum power dissipation of 2.6 W allowing moderate thermal loads.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Low typical gate charge of 2.9 nC ensuring fast switching performance.
- Maximum drain-source resistance of 700 mΩ for efficient conduction.
- Complies with automotive standard AEC-Q101 for quality assurance.
Product Description
DiodesZetex ZXMN10A07ZTA is a high-quality N-Channel MOSFET designed for power switching and amplification applications. It supports a maximum continuous drain current of 1.4 A and a drain-source voltage rating of 100 V, making it suitable for medium power electronics and industrial control circuits.
The device is packaged in a surface-mount SOT-89 type housing that facilitates automated PCB assembly and compact board layouts. Its enhancement mode operation ensures efficient switching with low gate charge (2.9 nC) and drain-source resistance (700 mΩ), optimizing performance and power efficiency.
This MOSFET features robust operating temperature ranges from -55°C to 150°C, suitable for automotive and industrial environments, supported by compliance with AEC-Q101 automotive standards.
The compact physical size with length 4.6 mm, width 2.6 mm, and height 1.6 mm enables use in space-constrained electronic assemblies. Designed for surface mounting with 3 pins for efficient PCB integration. Enhancement mode channel providing stable and reliable operation.
Maximum power dissipation of 2.6 W allowing moderate thermal loads. Wide operating temperature range from -55°C to 150°C for harsh environments. Low typical gate charge of 2.9 nC ensuring fast switching performance. Maximum drain-source resistance of 700 mΩ for efficient conduction.
Automotive quality compliant with AEC-Q101 standard. Compact dimensions for space-efficient electronic designs.
This MOSFET is ideal for industrial, automotive, and consumer electronics applications requiring reliable switching and amplification components. Its rugged construction and automotive approval ensure long-term durability and performance under challenging conditions.
EnvMart offers this DiodesZetex MOSFET as part of its broad semiconductor and electronics components catalog, supporting design engineers and manufacturing professionals in sourcing quality discrete semiconductor devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.4 A.
The maximum drain-source voltage rating is 100 V.
The typical gate charge is 2.9 nC, which contributes to its fast switching performance.
The dimensions of the SOT-89 package are 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.
The maximum power dissipation is 2.6 W, allowing for moderate thermal loads.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
The maximum drain-source resistance is 700 mΩ, which ensures efficient conduction.
Yes, it complies with the AEC-Q101 automotive standard for quality assurance.
This model is designed for surface mounting with a 3-pin configuration for efficient PCB integration.
It utilizes an N-channel type, which is suitable for power switching and amplification applications.
The maximum gate-source voltage is -20 V to +20 V.
This MOSFET is suitable for industrial, automotive, and consumer electronics applications requiring reliable switching and amplification.
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