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Infineon 1200 V 31.9 A Schottky Diode 3-Pin TO-220 IDH10G120C5XKSA1

Category Schottky Diodes & Rectifiers Brand Infineon Condition New

Specifications

Country of Origin Malaysia
Brand Infineon
Height 15.95mm
Length 10.2mm
Model IDH10G120C5XKSA1
Width 4.5mm
Mount Type Through Hole
Series IDH10G120C5
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Forward Current If 31.9A
Peak Reverse Repetitive Voltage Vrrm 1200V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 320μA
Peak Non-Repetitive Forward Surge Current Ifsm 99A
Maximum Forward Voltage Vf 2.6V

Key Features

  • High breakdown voltage of 1200 volts ensuring robustness in power circuits.
  • Maximum continuous forward current rating of 31.9 amperes for stable conduction.
  • Peak reverse repetitive voltage capability supports efficient rectification.
  • Compact TO-220 package with 3 pins suitable for through-hole mounting.
  • Robust operating temperature range from -55°C to 175°C.
  • Low forward voltage of 2.6 V minimizes power losses during conduction.
  • Peak non-repetitive forward surge current rating of 99 A for transient tolerance.
  • Constructed with Silicon Carbide Schottky technology enhancing thermal performance.

Product Description

Infineon IDH10G120C5XKSA1 is a Silicon Carbide (SiC) Schottky diode in a TO-220 3-pin through-hole package. It provides a maximum continuous forward current of 31.9 A and a peak reverse repetitive voltage of 1200 V, designed for high efficiency and thermal performance in demanding power electronics applications.

This diode features a low forward voltage drop of 2.6 V and can operate reliably between temperatures of -55°C and 175°C. The rugged construction supports a peak non-repetitive forward surge current of 99 A, enhancing tolerance to transient overloads.

Its compact 3-pin TO-220 package simplifies mounting and integration into power supply modules.

The Infineon thinQ! Generation 5 technology brings improved wafer thinness and superior thermal characteristics, beneficial in telecom switch mode power supplies (SMPS), high-end servers, uninterruptible power supplies (UPS), motor drives, solar inverters, PC Silverbox units, and various lighting applications.

High breakdown voltage for power durability and safety. High current rating supports efficient power conduction. Wide temperature range for reliability in varied environments. Low voltage drop enhances system efficiency.

Robust surge current tolerance ensures protection against current spikes. Advanced SiC Schottky technology for thermal and electrical performance. Versatile use across industrial, telecom, and renewable energy sectors.

This Schottky diode is an excellent choice for engineers seeking reliable, high-performance rectification components within power conversion and industrial electronic designs. Explore similar power semiconductor devices and components at EnvMart for your applications.

Explore more products in our Schottky Diodes & Rectifiers category.

Infineon 1200 V 31.9 A Schottky Diode 3-Pin TO-220 IDH10G120C5XKSA1
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