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Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement Mode, 3-Pin TO-220 IRFB4227PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB4227PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 65A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 46 A, 250 V, 3-Pin TO-220AB Infineon IRFB4229PBFBrand | Infineon |
Key Features
- Enhancement mode N-channel MOSFET designed for through hole mounting.
- Maximum power dissipation of 330 W ensures robust performance under high loads.
- Low on-resistance of 24 mΩ reduces conduction losses and improves efficiency.
- Wide operating temperature range from -40°C to 175°C supports harsh environments.
- Typical gate charge of 70 nC at Vgs facilitates fast switching capabilities.
- Maximum gate-source voltage rating of ±30 V enhances device reliability.
- Compact dimensions with height 9.02 mm, length 10.66 mm, and width 4.82 mm.
- Complies with RoHS standards for environmental safety.
Product Description
Infineon IRFB4227PBF is a HEXFET N-Channel MOSFET designed for high-efficiency power management and motor control applications. It features a maximum continuous drain current of 65 A and can withstand a drain-source voltage up to 200 V. Packaged in a reliable 3-pin TO-220 through-hole configuration, this enhancement mode MOSFET offers excellent conduction performance with a maximum drain-source resistance of 24 milliohms.
Operating reliably across a broad temperature range from -40°C to 175°C, the IRFB4227PBF provides durability for industrial and automotive power electronics. Its typical gate charge of 70 nanocoulombs at a gate-source voltage of 10 V enables fast switching with minimal power loss. The device can tolerate gate-source voltages as high as ±30 V, enhancing robustness against voltage spikes.
The MOSFET’s forward voltage drop is approximately 1.3 V, supporting efficient operation in power conversion and motor driver circuits. Compact physical dimensions of roughly 9 mm height, 10.66 mm length, and 4.82 mm width suit space-constrained electronic designs. Additionally, the component is RoHS compliant, ensuring environmentally responsible manufacturing.
This device is well suited for synchronous rectification in AC-DC converters, motor drive power stages, and other power management functions where low conduction losses and fast switching are paramount.
Enhancement mode N-channel MOSFET with 65 A continuous current capability. Maximum voltage rating of 200 V and low on-resistance for efficient power handling. Robust thermal ratings for reliable operation in demanding industrial environments.
Compact TO-220 package for easy through-hole mounting and heat dissipation. Environmental compliance with RoHS standards. Explore more Infineon MOSFETs and semiconductor devices on EnvMart for advanced electronics and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 65 A.
It can withstand a maximum drain-source voltage of 200 V.
The dimensions of the TO-220 package are approximately 9.02 mm in height, 10.66 mm in length, and 4.82 mm in width.
The typical gate charge at a gate-source voltage of 10 V is 70 nC.
The maximum power dissipation for this model is 330 W.
It operates reliably across a temperature range from -40°C to 175°C.
The maximum gate-source voltage rating is ±30 V.
The forward voltage drop is approximately 1.3 V.
This model is designed for through-hole mounting.
The device complies with RoHS standards for environmental safety.
The maximum drain-source resistance is 24 mΩ.
This MOSFET is well suited for synchronous rectification in AC-DC converters and motor drive power stages.
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