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Infineon Dual HEXFET 2 Type P-Channel MOSFET 8 A 30 V Enhancement 8-Pin SOIC IRF9362TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF9362TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Dual |
| Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362PBFBrand | Infineon |
Key Features
- This discrete P-Channel MOSFET uses enhancement channel mode technology.
- It features a dual transistor configuration in an 8-pin SOIC surface mount package.
- The maximum drain source resistance is 32 milliohms, optimizing conduction efficiency.
- The device offers a typical gate charge of 13 nanocoulombs at 13 V gate-source voltage.
- Operating temperature ranges from -55°C to 150°C, making it suitable for demanding environments.
- Power dissipation capability reaches up to 2 W for reliable performance.
- The maximum gate-source voltage rating is ±20 V, supporting robust gate drive conditions.
- This MOSFET is ideal for power management and switching applications in electronic and industrial equipment.
Product Description
Infineon IRF9362TRPBF Dual HEXFET 2 Type P-Channel MOSFET is a high-performance semiconductor device defined by its 8 A maximum continuous drain current and 30 V maximum drain source voltage. Featuring an 8-pin SOIC surface mount package, this enhancement-mode device offers reliable power switching capabilities in compact form factor.
Designed with a dual transistor configuration, the MOSFET incorporates Infineon's HEXFET technology to provide low on-resistance of 32 milliohms, which ensures minimal conduction losses in power circuits. It supports a typical gate charge of 13 nC at Vgs = 13 V, enabling efficient gate drive and switching speed optimization.
The device's operating temperature ranges from -55°C up to 150°C making it suitable for diverse industrial applications including power management, DC-DC converters, load switching, and motor control.
The package dimensions are compact: length 5 mm, width 4 mm, height 1.5 mm. It features a maximum power dissipation of 2 W and can tolerate gate-source voltage swings of -20 to +20 V, supporting robust control signal environments.
This P-Channel MOSFET is well-suited for usage in electronic components, power connectors, and discrete semiconductor assemblies in a variety of commercial and industrial applications.
This dual P-Channel MOSFET supports continuous drain current of 8 A. Maximum drain-source voltage is rated at 30 V. Compact 8-pin SOIC surface mount package for flexible circuit board layouts. Low on-state resistance (Rds) of 32 milliohms reduces conduction losses.
Operating temperature range of -55°C to 150°C for reliability in harsh environments. Power dissipation capability of 2 watts ensures consistent performance. Typical gate charge at 13 nC enables fast switching with low losses.
Explore more MOSFETs and discrete semiconductor devices on EnvMart for efficient and reliable power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
The maximum drain-source voltage rating is 30 V.
The typical gate charge at 13 V gate-source voltage is 13 nanocoulombs (nC).
The dimensions of the package are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum power dissipation capability of this MOSFET is 2 W.
The operating temperature range is from -55°C to 150°C.
This model uses a surface mount type.
This MOSFET has 8 pins.
The on-state resistance (Rds) is 32 milliohms.
The maximum gate-source voltage rating is ±20 V.
This model features a dual transistor configuration.
This MOSFET uses a P-Channel type.
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