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Infineon Dual HEXFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC IRF9362TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.5mm
Length 5mm
Model IRF9362TRPBF
Width 4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P
Maximum Continuous Drain Current Id 8A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 32mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 13nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V
Transistor Configuration Dual
Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362PBFBrand Infineon

Key Features

  • This MOSFET features a 32 milliohm maximum drain-source resistance for low conduction losses.
  • The dual transistor configuration integrates two P-channel elements per chip.
  • Designed for surface mount applications with a compact SOIC package.
  • Suitable for operation in temperatures ranging from -55°C to 150°C.
  • Enhancement mode channel type with a maximum power dissipation of 2 watts.
  • Typical gate charge is 13 nanocoulombs at 13 volts gate drive voltage for fast switching.
  • Maximum gate-source voltage tolerance of -20 to +20 volts ensures robust control.
  • Forward voltage drop of 1.2 volts under typical conditions improves efficiency.

Product Description

Infineon IRF9362TRPBF is a Dual HEXFET Power MOSFET with 2 P-channel transistors integrated into an 8-pin Small Outline Integrated Circuit (SOIC) package. Rated for a maximum continuous drain current of 8 amperes and a drain-source voltage of 30 volts, this device is an excellent choice for efficient power switching and amplification in various electronic applications.

Thanks to its HEXFET technology with a low typical on-resistance of 32 milliohms, the MOSFET minimizes conduction losses, thus enhancing overall system efficiency. This device operates in enhancement mode, allowing it to be normally off, providing reliable control for power electronics circuits.

Thermally robust, the IRF9362TRPBF supports operation from -55°C up to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics contexts requiring rugged performance. Its forward voltage drop of 1.2 volts helps maintain consistent performance in switching applications.

The MOSFET’s modest power dissipation rating of 2 watts aligns with compact design goals, and its surface mount SOIC package ensures ease of placement on modern printed circuit boards. The device’s typical gate charge of 13 nC at 13 V gate drive voltage supports fast switching speeds needed in PWM and motor control functions.

Key attributes include dual transistor configuration, 8-pin SOIC packaging, and robust gate voltage tolerance allowing ±20 V without damage. The compact 5 mm by 4 mm footprint and 1.5 mm height are advantageous for space-conscious designs. With no specific automotive qualifications but adherence to RoHS environmental standards, this MOSFET serves a broad spectrum of electronic component needs.

This MOSFET is ideal for power management in industrial and electronic equipment requiring efficient switching and amplification. Useful in driver circuits, power line switches, DC-DC converters, and load switching applications.

Suitable for integration in consumer electronic devices and lighting controls. Its surface mount design supports automated assembly and high-density PCB layouts. Infineon’s HEXFET technology provides low conduction losses and improved thermal performance.

Use cases include automotive electronics, telecommunications, power tools, and home appliances. Explore more MOSFETs and power semiconductor solutions from Infineon in the EnvMart Electronics & Electricals category for optimized performance and reliable power control.

Infineon Dual HEXFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC IRF9362TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 8 amperes.

This MOSFET has a maximum drain-source voltage of 30 volts.

The typical gate charge for this unit at 13 volts gate drive voltage is 13 nanocoulombs.

The dimensions of this model are 5 mm in length, 4 mm in width, and 1.5 mm in height.

It operates within a temperature range of -55°C to 150°C.

This model uses an 8-pin Small Outline Integrated Circuit (SOIC) package.

The maximum power dissipation for this unit is 2 watts.

The forward voltage drop under typical conditions for this model is 1.2 volts.

This MOSFET integrates two P-channel elements per chip.

The maximum gate-source voltage tolerance for this model is -20 to +20 volts.

The channel type of this MOSFET is P-channel, operating in enhancement mode.

This MOSFET is suitable for applications such as driver circuits, power line switches, DC-DC converters, and load switching.

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