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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF9362TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Dual |
| Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Infineon IRF9362PBFBrand | Infineon |
Infineon IRF9362TRPBF is a Dual HEXFET Power MOSFET with 2 P-channel transistors integrated into an 8-pin Small Outline Integrated Circuit (SOIC) package. Rated for a maximum continuous drain current of 8 amperes and a drain-source voltage of 30 volts, this device is an excellent choice for efficient power switching and amplification in various electronic applications.
Thanks to its HEXFET technology with a low typical on-resistance of 32 milliohms, the MOSFET minimizes conduction losses, thus enhancing overall system efficiency. This device operates in enhancement mode, allowing it to be normally off, providing reliable control for power electronics circuits.
Thermally robust, the IRF9362TRPBF supports operation from -55°C up to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics contexts requiring rugged performance. Its forward voltage drop of 1.2 volts helps maintain consistent performance in switching applications.
The MOSFET’s modest power dissipation rating of 2 watts aligns with compact design goals, and its surface mount SOIC package ensures ease of placement on modern printed circuit boards. The device’s typical gate charge of 13 nC at 13 V gate drive voltage supports fast switching speeds needed in PWM and motor control functions.
Key attributes include dual transistor configuration, 8-pin SOIC packaging, and robust gate voltage tolerance allowing ±20 V without damage. The compact 5 mm by 4 mm footprint and 1.5 mm height are advantageous for space-conscious designs. With no specific automotive qualifications but adherence to RoHS environmental standards, this MOSFET serves a broad spectrum of electronic component needs.
This MOSFET is ideal for power management in industrial and electronic equipment requiring efficient switching and amplification. Useful in driver circuits, power line switches, DC-DC converters, and load switching applications.
Suitable for integration in consumer electronic devices and lighting controls. Its surface mount design supports automated assembly and high-density PCB layouts. Infineon’s HEXFET technology provides low conduction losses and improved thermal performance.
Use cases include automotive electronics, telecommunications, power tools, and home appliances. Explore more MOSFETs and power semiconductor solutions from Infineon in the EnvMart Electronics & Electricals category for optimized performance and reliable power control.
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