Vishay N-Channel Power MOSFET 6.6 A 500 V Enhancement 3-Pin TO-220FP IRFIB7N50APBF

Vishay IRFIB7N50APBF is a high voltage N-Channel power MOSFET designed for robust electronic applications requiring efficient switching and conduction. Rated at 6.6 amperes maximum continuous drain current and 500 volts maximum drain-source voltage, this device is tailored for enhancement mode operation in power electronic circuits.

Housed in a 3-pin TO-220FP package, it offers a through-hole mount type for reliable PCB assembly. The MOSFET exhibits a low Rds(on) of 0.52 ohms which minimizes conduction losses, enhancing overall circuit efficiency.

This semiconductor device supports a maximum power dissipation of 60 watts allowing it to handle substantial power loads while maintaining thermal stability. It features a typical gate charge of 52 nC at a gate-source voltage, contributing to fast switching capabilities.

The IRFIB7N50APBF operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics environments. Its maximum gate-source voltage rating of ±30 volts and forward voltage of 1.5 volts underscore its robust electrical performance.

This MOSFET is ideal for power management, motor control, and other discrete semiconductor applications. Compact dimensions of 9.8 mm height, 10.63 mm length, and 4.83 mm width optimize PCB layout space. It complies with RoHS 2002/95/EC environmental standards ensuring use in eco-friendly designs.

Typical applications include power supplies, inverters, and electronic switching devices. Set within the Vishay IRFI series, it aligns with the brand’s reputation for semiconductor reliability. Explore Vishay products in the Power MOSFET category at EnvMart for a wide selection of power semiconductors suited to diverse electrical and electronic design needs.