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Vishay N-Channel Power MOSFET 60 V, 37 A, Enhancement Mode, TO-220 3-Pin IRFIZ48GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.3mm |
| Model | IRFIZ48GPBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFIZ48G |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 37A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
Key Features
- This device operates in enhancement mode with an 18mΩ Rds(on) that reduces conduction losses.
- The TO-220 3-pin package allows for easy through-hole mounting and efficient heat dissipation.
- Supports a maximum power dissipation of 50W, suitable for sustained high load applications.
- Wide operating temperature range from -55°C to 175°C enables use in harsh environments.
- Maximum gate-source voltage of ±20V ensures safe gate drive margins.
- Typical gate charge of 110nC allows predictable switching performance in circuit design.
- Ideal for motor drivers, DC-DC converters, and power supply control on PCB applications.
- Manufactured in China with no special industry certifications.
Product Description
Vishay IRFIZ48GPBF is a high-performance N-Channel Power MOSFET designed for robust power switching and control in electronic systems. It features a maximum drain-source voltage of 60 V and a continuous drain current capacity of 37 A, making it suitable for medium-voltage and high-current applications.
The device is packaged in a TO-220 3-pin through-hole format, facilitating straightforward mounting and thermal management via a heat sink. With an Rds(on) of just 18mΩ, it offers efficient power transfer by minimizing conduction losses. The MOSFET's enhancement mode operation and maximum gate-source voltage rating of ±20V ensure compatibility with various gate driver circuits.
Designed to operate over a broad temperature spectrum from -55°C to 175°C, this MOSFET is well-suited for demanding industrial, automotive, and power management applications. Its typical gate charge of 110nC balances switching speed and driver requirements, aiding in efficient pulse-width modulation and power supply designs.
Applications include motor driver stages in industrial controllers, DC-DC conversion requiring through-hole power devices, and test or prototyping power supplies. The 50W power dissipation rating supports sustained load handling with appropriate thermal management.
Enhancement mode N-Channel MOSFET with 37 A continuous current capacity. 60 V maximum drain-source voltage suitable for medium-voltage switching tasks. Low Rds(on) of 18mΩ reduces conduction losses for efficient operation.
Robust 3-pin TO-220 through-hole package enables easy PCB mounting and heat sink attachment. Wide operating temperature range (-55°C to 175°C) supports harsh environment use. Maximum gate-source voltage ±20V protects device from gate overstress.
Typical gate charge of 110nC allows predictable switching in power applications. Applications include industrial motor drivers, DC-DC converters, and prototyping power supplies.
Manufactured in China, this MOSFET does not carry automotive or other special certifications, focusing instead on reliable general-purpose power switching performance. Explore more Power MOSFET products to advance your electronic power management designs with EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 37 A.
It has a maximum drain-source voltage rating of 60 V.
The Rds(on) value is 18mΩ, which helps reduce conduction losses.
The typical gate charge is 110nC, allowing for predictable switching performance.
This MOSFET operates over a temperature range from -55°C to 175°C.
It comes in a TO-220 3-pin through-hole package, facilitating easy mounting.
The maximum power dissipation is rated at 50W, suitable for sustained high load applications.
The maximum gate-source voltage is ±20V, ensuring safe gate drive margins.
It is suitable for applications such as motor drivers, DC-DC converters, and power supply control.
The dimensions are 10.3mm in length, 4.7mm in width, and 9.8mm in height.
This device utilizes an N-channel configuration in enhancement mode.
This model is manufactured in China.
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