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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFPG50PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFPG50 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.1A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 190nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
| N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120Brand | Toshiba |
| Transistor,MOSFET,IRFPG50Brand | Vishay |
Vishay IRFPG50PBF is a robust N-Channel Power MOSFET featuring a maximum continuous drain current of 6.1 A and a maximum drain-source voltage of 1 kV. This enhancement mode device, housed in a three-pin TO-247AC package, is designed for through-hole mounting, ensuring reliable mechanical and thermal performance in industrial environments.
With a maximum power dissipation rated at 190 W and an Rds(on) of up to 2 Ω, this MOSFET offers efficient switching and low conduction losses, critical for power supply, converter, and inverter circuits. The typical gate charge of 190 nC and gate voltage tolerance from -20 V to +20 V facilitate flexible and precise gate driving strategies.
The IRFPG50PBF supports operation in wide ambient temperature ranges from -55°C to 150°C, making it suitable for applications experiencing extreme temperature fluctuations. Its forward voltage of 1.8 V is important for evaluating switching losses and diode conduction impacts.
Applications for this device include industrial motor drive front-ends, high-voltage power supplies, inverter switching, UPS stages, and resistive load switching in test equipment. The TO-247AC package enables sturdy heatsink attachment and ease of repair or prototyping.
The device uses enhancement channel mode for reliable power control. The through-hole TO-247AC package supports robust mounting and heat dissipation. Supports continuous currents up to 6.1 A and voltages up to 1 kV. Wide operating temperature range from -55°C to 150°C ensures versatility.
Low maximum Rds(on) helps reduce thermal and conduction losses. Typical gate charge allows manageable gate drive energy. Forward voltage drop informs conduction loss calculations. Compatible with industrial power supplies, converters, motor drives, and UPS applications.
Ideal for through-hole prototype development and repair tasks. Complies with RoHS environmental standards. Explore more Power MOSFETs and semiconductor components at EnvMart for your industrial and electronic design needs.
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