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Vishay N-Channel Power MOSFET, 6.1 A, 1 kV, Enhancement Mode, 3-Pin TO-247AC IRFPG50PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFPG50PBF
Width 5.31mm
Mount Type Through Hole
Series IRFPG50
Maximum Operating Temperature 150°C
Package Type TO-247AC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 6.1A
Maximum Drain Source Voltage Vds 1kV
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 190W
Typical Gate Charge Qg @ Vgs 190nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.8V
N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120Brand Toshiba
Transistor,MOSFET,IRFPG50Brand Vishay

Key Features

  • The device supports an enhancement channel mode enabling efficient power control.
  • Comes in a robust 3-pin TO-247AC through-hole package for reliable mounting.
  • Maximum power dissipation is rated at 190 W for demanding applications.
  • Typical gate charge is 190 nC, suitable for stable drive energy budgeting.
  • Operates safely across a wide temperature range from -55°C to 150°C.
  • Features a maximum drain-source resistance of 2 Ω to reduce conduction losses.
  • Maximum gate-source voltage tolerance of -20 V to +20 V allows flexible gate driving.
  • Forward voltage drop of 1.8 V impacts switching and conduction calculations in circuits.

Product Description

Vishay IRFPG50PBF is a robust N-Channel Power MOSFET featuring a maximum continuous drain current of 6.1 A and a maximum drain-source voltage of 1 kV. This enhancement mode device, housed in a three-pin TO-247AC package, is designed for through-hole mounting, ensuring reliable mechanical and thermal performance in industrial environments.

With a maximum power dissipation rated at 190 W and an Rds(on) of up to 2 Ω, this MOSFET offers efficient switching and low conduction losses, critical for power supply, converter, and inverter circuits. The typical gate charge of 190 nC and gate voltage tolerance from -20 V to +20 V facilitate flexible and precise gate driving strategies.

The IRFPG50PBF supports operation in wide ambient temperature ranges from -55°C to 150°C, making it suitable for applications experiencing extreme temperature fluctuations. Its forward voltage of 1.8 V is important for evaluating switching losses and diode conduction impacts.

Applications for this device include industrial motor drive front-ends, high-voltage power supplies, inverter switching, UPS stages, and resistive load switching in test equipment. The TO-247AC package enables sturdy heatsink attachment and ease of repair or prototyping.

The device uses enhancement channel mode for reliable power control. The through-hole TO-247AC package supports robust mounting and heat dissipation. Supports continuous currents up to 6.1 A and voltages up to 1 kV. Wide operating temperature range from -55°C to 150°C ensures versatility.

Low maximum Rds(on) helps reduce thermal and conduction losses. Typical gate charge allows manageable gate drive energy. Forward voltage drop informs conduction loss calculations. Compatible with industrial power supplies, converters, motor drives, and UPS applications.

Ideal for through-hole prototype development and repair tasks. Complies with RoHS environmental standards. Explore more Power MOSFETs and semiconductor components at EnvMart for your industrial and electronic design needs.

Vishay N-Channel Power MOSFET, 6.1 A, 1 kV, Enhancement Mode, 3-Pin TO-247AC IRFPG50PBF
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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 6.1 A.

This model has a maximum drain-source voltage rating of 1 kV.

The maximum power dissipation is rated at 190 W.

It comes in a 3-pin TO-247AC package designed for through-hole mounting.

The operating temperature range is from -55°C to 150°C.

The maximum gate-source voltage tolerance is -20 V to +20 V.

The typical gate charge is 190 nC.

The maximum drain-source resistance is 2 Ω.

It is suitable for applications such as industrial motor drives, high-voltage power supplies, inverter switching, and UPS stages.

The forward voltage drop is 1.8 V.

The dimensions of the TO-247AC package are height: 20.7 mm, length: 15.87 mm, and width: 5.31 mm.

This MOSFET complies with RoHS environmental standards.

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