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Infineon HEXFET N-Channel MOSFET, 53 A Maximum Continuous Drain Current, 55 V Drain Source Voltage, Enhancement IRFZ46NPBF

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Infineon HEXFET N-Channel MOSFET, 53 A Maximum Continuous Drain Current, 55 V Drain Source Voltage, Enhancement IRFZ46NPBF

Name: Infineon HEXFET N-Channel MOSFET, 53 A Maximum Continuous Drain Current, 55 V Drain Source Voltage, Enhancement IRFZ46NPBF
Brand: Infineon
SKU: 196218

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	9.02mm
Length	10.66mm
Model	IRFZ46NPBF
Width	4.82mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-220AB
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	53A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	17mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	107W
Typical Gate Charge Qg @ Vgs	72nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V
N-channel MOSFET,IRFZ46N 53A 55VBrand	International Rectifier

Key Features

This MOSFET features a maximum power dissipation of 107 W for effective thermal handling.
It offers a low on-resistance of 17 milliohms to maximize efficiency.
The enhancement mode channel ensures precise control and versatility in circuits.
Operates reliably in a wide temperature range from -55°C up to 175°C.
Equipped with a 3-pin TO-220AB package suitable for through-hole mounting.
Typical gate charge is 72 nC at gate-source voltage, enabling fast switching.
Gate voltage tolerance ranges from -20 V to +20 V for robust operation.
Designed for power conversion, motor control, and energy-efficient power management systems.

Product Description

The Infineon IRFZ46NPBF HEXFET N-Channel MOSFET delivers a continuous drain current of 53 A and a maximum drain-source voltage of 55 V, operating in an enhancement mode to provide efficient electronic switching and power management functionalities.

Featuring a TO-220AB 3-pin through-hole package, this MOSFET allows easy integration with effective heat sinking to manage its maximum power dissipation rating of 107 W. Its low on-resistance of 17 milliohms reduces conduction losses, improving overall system efficiency.

It supports industrial and electronic applications including automation power conversion, motor control circuits, and energy-efficient power systems. Its broad operating temperature range from -55°C up to 175°C ensures reliable performance in extreme conditions.

The device's gate charge specification of 72 nC and a gate-source voltage tolerance of ±20 V support rapid and reliable switching operations, making it suitable for switch-mode power supplies and other high-speed electronic circuits.

This MOSFET supports demanding load currents up to 53 A continuously. Its robust package design allows adequate heat dissipation up to 107 W. Low resistance characteristics enhance energy efficiency in electronics. Wide temperature operation range ensures application versatility.

Compatibility with through-hole mounting facilitates various board designs.

The IRFZ46NPBF is an essential component for industrial, manufacturing, automation, and power electronics applications requiring high reliability and efficiency. Browse EnvMart for more Infineon semiconductor solutions and related power components to support your projects and system designs.