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Infineon BSC Type N-Channel MOSFET, 381A Continuous Drain Current, 40V, 0.7mΩ Rds(on), 8-Pin TDSON BSC034N10LS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC034N10LS5ATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature 175°C
Package Type TDSON
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • This MOSFET operates efficiently with a low 0.7mΩ maximum drain-source resistance to reduce conduction losses.
  • It supports a maximum power dissipation of 81W for reliable thermal performance during operation.
  • The device handles wide ambient temperatures from -55°C to 175°C, suitable for harsh industrial environments.
  • It features an 80nC typical gate charge for predictable and efficient switching control.
  • Designed for surface mounting, the TDSON package enables compact power stage layouts.
  • The gate-source voltage withstands up to 20V to allow flexible drive margins.
  • Applications include high-current DC-DC converters, synchronous rectification in switching regulators, and motor drivers requiring low conduction losses.
  • The MOSFET lowers heat generation due to minimal I2R losses enabled by low Rds(on).

Product Description

Infineon BSC034N10LS5ATMA1 is a high-performance N-channel MOSFET designed for power switching and conversion applications requiring robust thermal tolerance and low conduction losses. Rated at a maximum continuous drain current of 381A and a drain-source voltage of 40V, this device is housed in an 8-pin TDSON surface-mount package suitable for compact board-mounted power stages.

Featuring a low maximum drain-source resistance (Rds(on)) of 0.7mΩ, it significantly reduces conduction losses, enhancing efficiency and minimizing heat generation in dense power systems. This MOSFET supports a maximum power dissipation of 81W, ensuring reliable operation under sustained load and thermal stress.

The device operates over a broad temperature range from -55°C to 175°C, making it ideal for demanding industrial, server power distribution, and automotive power management environments. With a typical gate charge of 80nC and a gate-source voltage tolerance up to 20V, it offers predictable and flexible switching control for high-current applications.

Applications include high-current DC-DC converters in power supplies, synchronous rectification in switching regulators, motor driver circuits requiring low conduction losses, server power distribution modules, and industrial power management assemblies requiring durable, efficient switching components.

This MOSFET operates efficiently with a low 0.7mΩ maximum drain-source resistance to reduce conduction losses. It supports a maximum power dissipation of 81W for reliable thermal performance during operation. The device handles wide ambient temperatures from -55°C to 175°C, suitable for harsh industrial environments.

It features an 80nC typical gate charge for predictable and efficient switching control. Designed for surface mounting, the TDSON package enables compact power stage layouts. The gate-source voltage withstands up to 20V to allow flexible drive margins.

Applications include high-current DC-DC converters, synchronous rectification in switching regulators, and motor drivers requiring low conduction losses. The MOSFET lowers heat generation due to minimal I2R losses enabled by low Rds(on).

Infineon semiconductor products are widely used in industrial, automotive, and electronic power management systems. Explore more MOSFETs and transistor solutions in the Electronics & Electricals category at EnvMart.

Infineon BSC Type N-Channel MOSFET, 381A Continuous Drain Current, 40V, 0.7mΩ Rds(on), 8-Pin TDSON BSC034N10LS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381A.

It can handle a maximum drain-source voltage of 40V.

The maximum power dissipation rating is 81W, ensuring reliable thermal performance during operation.

The maximum drain-source resistance (Rds(on)) is 0.7mΩ, which helps reduce conduction losses.

The typical gate charge is 80nC, facilitating predictable and efficient switching control.

It operates within a temperature range of -55°C to 175°C, making it suitable for harsh industrial environments.

This model is designed for surface mounting, housed in an 8-pin TDSON package.

The maximum gate-source voltage it can withstand is 20V, allowing for flexible drive margins.

It is suitable for applications such as high-current DC-DC converters, synchronous rectification in switching regulators, and motor drivers requiring low conduction losses.

This device complies with RoHS standards, ensuring it meets environmental regulations.

The pin count for this model is 8, which is typical for its TDSON package.

This model is a Type N-channel MOSFET, designed for efficient power switching applications.

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