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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC034N10LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSC034N10LS5ATMA1 is a high-performance N-channel MOSFET designed for power switching and conversion applications requiring robust thermal tolerance and low conduction losses. Rated at a maximum continuous drain current of 381A and a drain-source voltage of 40V, this device is housed in an 8-pin TDSON surface-mount package suitable for compact board-mounted power stages.
Featuring a low maximum drain-source resistance (Rds(on)) of 0.7mΩ, it significantly reduces conduction losses, enhancing efficiency and minimizing heat generation in dense power systems. This MOSFET supports a maximum power dissipation of 81W, ensuring reliable operation under sustained load and thermal stress.
The device operates over a broad temperature range from -55°C to 175°C, making it ideal for demanding industrial, server power distribution, and automotive power management environments. With a typical gate charge of 80nC and a gate-source voltage tolerance up to 20V, it offers predictable and flexible switching control for high-current applications.
Applications include high-current DC-DC converters in power supplies, synchronous rectification in switching regulators, motor driver circuits requiring low conduction losses, server power distribution modules, and industrial power management assemblies requiring durable, efficient switching components.
This MOSFET operates efficiently with a low 0.7mΩ maximum drain-source resistance to reduce conduction losses. It supports a maximum power dissipation of 81W for reliable thermal performance during operation. The device handles wide ambient temperatures from -55°C to 175°C, suitable for harsh industrial environments.
It features an 80nC typical gate charge for predictable and efficient switching control. Designed for surface mounting, the TDSON package enables compact power stage layouts. The gate-source voltage withstands up to 20V to allow flexible drive margins.
Applications include high-current DC-DC converters, synchronous rectification in switching regulators, and motor drivers requiring low conduction losses. The MOSFET lowers heat generation due to minimal I2R losses enabled by low Rds(on).
Infineon semiconductor products are widely used in industrial, automotive, and electronic power management systems. Explore more MOSFETs and transistor solutions in the Electronics & Electricals category at EnvMart.
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