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Infineon HEXFET N-Channel Power MOSFET 57 A, 100 V, Enhancement Mode, 3-Pin TO-220 IRF3710PBF
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF3710PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 57A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| IRF3710, N-Channel MOSFET Transistor 57A 100V, 3-Pin TO-220ABBrand | International Rectifier |
Key Features
- Utilises HEXFET technology for low on-resistance and enhanced performance.
- Suitable for through-hole mounting with 3-pin TO-220 package.
- Maximum power dissipation of 200 W supports demanding applications.
- Operates efficiently at maximum junction temperatures up to 175°C.
- Fast switching speed enabled by a typical gate charge of 130 nC.
- Low forward voltage of 1.2 V minimizes conduction losses.
- Supports automotive and industrial power control systems.
- Designed for robust performance with wide temperature range from -55°C to 175°C.
Product Description
Infineon IRF3710PBF HEXFET N-Channel Power MOSFET offers robust and efficient switching capabilities for industrial, automotive, and power management applications. Featuring a continuous drain current rating of 57 A and a maximum drain-source voltage of 100 V, this device ensures high reliability and performance under demanding electrical conditions.
Its through-hole TO-220 package with 3 pins facilitates easy mounting and excellent thermal dissipation. The MOSFET leverages advanced HEXFET technology to achieve a low drain-source resistance of 23 mΩ, reducing power losses and enhancing overall efficiency.
With a maximum power dissipation of 200 W and an operating temperature range from -55°C to 175°C, the IRF3710PBF is suited for applications requiring high current handling, thermal stability, and fast switching. Typical gate charge of 130 nC supports rapid switching, optimizing performance in power supply circuits, motor control, and automotive energy management systems.
The device supports gate voltages in the range -20 V to +20 V, with enhancement mode operation allowing precise control. Its forward voltage of 1.2 V helps minimize energy loss in conduction.
Utilises HEXFET technology for optimal conduction and switching efficiency. Designed for use in automotive power systems, industrial automation, motor control, and power supplies. Through-hole mounting TO-220 package ensures reliable installation.
High maximum power dissipation suitable for demanding environments. Wide temperature range operation ensures suitability for harsh conditions. Low on-resistance allows for reduced heat generation and improved performance.
Fast switching enhances efficiency in high-speed circuits. Robust device construction ensures long-term reliability.
This component is ideal for designers seeking reliable and efficient MOSFET transistors for medium to high power electronic circuits. Explore more products like this in the Infineon semiconductor range available on EnvMart for industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 57 A.
It has a maximum drain-source voltage rating of 100 V.
The typical gate charge is 130 nC.
The maximum power dissipation is 200 W.
The dimensions of the TO-220 package are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
This model operates within a temperature range of -55°C to 175°C.
The forward voltage is 1.2 V, which helps minimize conduction losses.
It supports through-hole mounting with a 3-pin configuration.
The maximum gate-source voltage is -20 V to +20 V.
This model is suitable for automotive power systems, industrial automation, motor control, and power supplies.
It uses an N-channel configuration with enhancement mode operation.
The maximum drain-source resistance is 23 mΩ, which reduces power losses.
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