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onsemi N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247 Through Hole NGTB25N120FL3WG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Length | 20.8mm |
| Model | NGTB25N120FL3WG |
| Width | 16.25mm |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 349W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Features a maximum continuous collector current of 25 amperes.
- Supports a maximum collector emitter voltage of 1200 volts.
- Maximum power dissipation is rated at 349 watts ensuring robust performance.
- Packaged in a 3-pin TO-247 through-hole mount for secure installation.
- Designed to operate efficiently up to 175°C maximum operating temperature.
- Gate emitter voltage tolerance of ±30 volts enhances control stability.
- Compact dimensions of 20.8 mm length and 16.25 mm width for space-saving design.
- Switching speed up to 1 MHz for fast operation in power electronics.
Product Description
onsemi NGTB25N120FL3WG is a high-performance N-Channel IGBT-Ultra Field Stop transistor designed for power semiconductor applications requiring both high efficiency and rapid switching capability.
This device combines the advantages of MOSFET gate drive with bipolar transistor current handling, making it ideal for motor drives, power converters, and industrial power supplies.
Its robust construction with a TO-247 3-pin through-hole package facilitates easy mounting and excellent thermal management.
The transistor supports a continuous collector current of 25 A and can withstand collector emitter voltages up to 1200 V, making it suitable for demanding applications in industrial and commercial sectors.
The maximum power dissipation of 349 W coupled with a maximum operating temperature of 175°C ensures reliable performance under heavy electrical loads.
Key technical specifications such as a gate emitter voltage of ±30 V, switching speeds up to 1 MHz, and a compact form factor with dimensions 20.8 mm by 16.25 mm make this transistor an efficient choice for power electronics.
Features a maximum continuous collector current of 25 amperes. Supports a maximum collector emitter voltage of 1200 volts. Maximum power dissipation is rated at 349 watts ensuring robust performance. Packaged in a 3-pin TO-247 through-hole mount for secure installation.
Designed to operate efficiently up to 175°C maximum operating temperature. Gate emitter voltage tolerance of ±30 volts enhances control stability. Compact dimensions of 20.8 mm length and 16.25 mm width for space-saving design.
Switching speed up to 1 MHz for fast operation in power electronics.
This product finds application in industrial machinery, motor drives, power supply units, and other high current switching operations requiring fast response and efficient energy management.
Explore the Electronics & Electricals category for more reliable semiconductors and power components at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this model is 25 amperes.
It supports a maximum collector emitter voltage of 1200 volts.
The maximum power dissipation is rated at 349 watts.
It is designed to operate efficiently up to a maximum temperature of 175°C.
The compact dimensions are 20.8 mm in length and 16.25 mm in width.
This unit is packaged in a 3-pin TO-247 through-hole mount for secure installation.
It has a gate emitter voltage tolerance of ±30 volts.
The switching speed can reach up to 1 MHz, allowing for fast operation in power electronics.
The minimum operating temperature is -55°C.
This model is compliant with RoHS standards.
It is suitable for applications in industrial machinery, motor drives, power supply units, and high current switching operations.
This transistor has a pin count of 3.
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