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Nexperia Digital Transistor PNP 3-Pin UMT, -100 mA Collector Current, -50 V Emitter Voltage, 200 mW Power PDTA143ZU,115

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Nexperia Digital Transistor PNP 3-Pin UMT, -100 mA Collector Current, -50 V Emitter Voltage, 200 mW Power PDTA143ZU,115

Name: Nexperia Digital Transistor PNP 3-Pin UMT, -100 mA Collector Current, -50 V Emitter Voltage, 200 mW Power PDTA143ZU,115
Brand: Nexperia
SKU: 193844
Price: 0.07 USD
Availability: InStock

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Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	PDTA143ZU,115
Width	1.35mm
Mount Type	Surface
Series	PDTA143Z
Maximum Operating Temperature	150°C
Package Type	UMT
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-50V
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	10V
Maximum Collector Base Voltage VCBO	-50V
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single

Key Features

Capable of handling a maximum DC collector current of -100 mA.
Maximum collector-emitter voltage rated at -50 V for reliable performance.
Equipped with a power dissipation capacity of 200 mW suitable for low power circuits.
Features a minimum DC current gain (hFE) of 100 for efficient amplification.
Operates within a temperature range from -65°C to 150°C ensuring durability in various environments.
Single transistor configuration with PNP polarity compatible with digital circuit designs.
Surface mount type facilitates automated assembly and compact PCB layouts.
Manufactured in Malaysia with consistent quality standards.

Product Description

Nexperia PDTA143ZU,115 digital transistor is a precision PNP bipolar transistor housed in a compact 3-pin UMT surface mount package. It is designed specifically for integration into digital circuits requiring reliable switching and amplification functions with a maximum DC collector current of -100 mA and voltage ratings up to -50 V.

The transistor has a maximum power dissipation of 200 mW, enabling usage in applications with moderate power requirements. Its minimum DC current gain (hFE) of 100 ensures efficient current amplification for switching and digital logic control. With a broad operating temperature range from -65°C to 150°C, it suits industrial, commercial, and automotive environments, although it is not classified under automotive standards.

Its surface mount design and single transistor configuration make it ideal for assembly using automated pick-and-place machines, saving board space and enabling high-density PCB designs. The transistor's physical dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height, supporting compact device manufacturing.

These resistor-equipped bipolar transistors, also called digital or bias resistor transistors, include integrated resistors allowing them to be driven directly by digital sources without additional components, simplifying circuit design.

Maximum DC collector current: -100 mA. Maximum collector-emitter voltage: -50 V. Power dissipation: 200 mW. Minimum DC current gain (hFE): 100. Operating temperature range: -65°C to 150°C. Package type: 3-Pin UMT surface mount.

Transistor polarity: PNP, single configuration. Compact size: 2.2 x 1.35 x 1 mm. Manufactured in Malaysia under strict quality control.

This digital transistor is widely applicable in industrial control systems, consumer electronics, automotive electronics, and communication devices requiring dependable transistor switching in low power digital circuits.

Discover more semiconductor components and Digital Transistors at EnvMart for your industrial and electronic design needs.