Infineon CoolMOS C3 N-Channel MOSFET, 47 A Continuous Drain Current, 650 V Voltage, 415 W Power Dissipation SPW47N60C3FKSA1

Infineon SPW47N60C3FKSA1 is a high-performance CoolMOS C3 series N-Channel MOSFET designed for power electronics applications. This component supports a maximum continuous drain current of 47A and can sustain voltages up to 650V, making it suitable for a wide range of industrial, automation, and power management situations.

The device's low drain-source resistance of 70 milliohms contributes to energy-efficient operation and reduced power losses. Packaged in a robust TO-247 format with three pins and through-hole mounting, it allows for easy integration into standard printed circuit boards.

This MOSFET operates in enhancement mode, providing precise control over switching behavior. It safely operates within temperature limits from -55°C to 150°C, enabling dependable performance in harsh environments. The gate-source voltage must be kept within the -20V to +20V limits to maintain safety and device integrity.

Key technical parameters include a typical gate charge of 252 nanocoulombs and a forward voltage of approximately 1.2V, facilitating efficient switching and conduction. It dissipates up to 415 watts of power, suitable for intensive power management and motor control applications.

Typical applications involve renewable energy conversion, motor drives, and power management systems, where the MOSFET’s high voltage and current capability ensures stable and efficient operation.

Rated for high power dissipation of 415W supporting demanding applications. Features low maximum drain-source resistance of 70mΩ for improved energy efficiency. Constructed in a TO-247 package with 3 pins for through-hole mounting.

Designed for enhancement mode operation to enable better control performance. Operates reliably within an ambient temperature range from -55°C up to 150°C. Gate-source voltage tolerance ranges from -20V to +20V ensuring electrical stability.

Typical gate charge of 252nC suitable for fast switching applications. Forward voltage drop of 1.2V supports efficient conduction.

This MOSFET is a reliable choice for demanding industrial and commercial power electronic applications requiring high current and voltage ratings. Explore similar semiconductor and power management components in the EnvMart categories for expanded electronic solution options.

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