Infineon N-Channel Power MOSFET 40 V, 192 A, 81 W, 8-Pin PQFN IRFH8324TRPBF

The Infineon IRFH8324TRPBF N-Channel Power MOSFET is engineered for applications requiring low RDS(on) and high current handling capability. Featuring a drain-source voltage of 40 V and maximum continuous drain current of 192 A, it suits low frequency power management circuits such as DC motors, battery management systems, inverters, and DC-DC converters.

This MOSFET utilizes an 8-pin PQFN surface mount package, providing a low profile with dimensions of 6.3 mm length, 5.3 mm width, and 1.2 mm height, optimizing PCB space and thermal performance. Its low on-resistance of 0.7 mΩ reduces conduction losses, improving efficiency and thermal dissipation. The device also supports a maximum power dissipation of 81 W and operates reliably across a temperature range of -55°C to 175°C, making it suitable for demanding industrial and automotive environments.

Additional technical features include a typical gate charge of 80 nC at Vgs, ensuring rapid switching speed, and a maximum gate-source voltage of 20 V for flexible gate drive options. The MOSFET also exhibits a forward voltage of 1 V enhancing conduction efficiency. It conforms to RoHS environmental standards and meets the automotive grade AEC-Q101 for reliability in vehicle systems.

Applications of this MOSFET span various industrial sectors including automotive power electronics, motor control, power supplies, and other industrial power conversion equipment. Its rugged design and optimized electrical characteristics make it ideal for high-performance power management and control in commercial and industrial systems.

Maximum continuous drain current of 192 A ensures robust performance. Drain-source voltage rated at 40 V suitable for low voltage power circuits. Low on-resistance (0.7 mΩ) minimizes conduction losses. High power dissipation capacity of 81 W for efficient thermal management.

Package type: 8-pin PQFN with surface mount design. Wide operating temperature range from -55°C to 175°C for reliability. Typical gate charge of 80 nC supports fast switching. Maximum gate-source voltage of 20 V enhances drive flexibility.

Forward voltage drop of 1 V reduces power loss during conduction. Complies with RoHS and automotive AEC-Q101 standards. Discover more high-quality semiconductor components like this within EnvMart's extensive electronic components catalog, optimized for industrial and automotive applications.