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Vishay 120 V 10 A Surface Mount Schottky Barrier Diode TO-252 Package V10PW12HM3/I
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | V10PW12HM3/I |
| Mount Type | Surface |
| Series | eSMP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Forward Current If | 10A |
| Peak Reverse Repetitive Voltage Vrrm | 120V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Non-Repetitive Forward Surge Current Ifsm | 180A |
| Maximum Forward Voltage Vf | 0.61V |
Key Features
- Features trench MOS barrier technology ensuring low forward voltage drop.
- Supports maximum continuous forward current of 10 amperes.
- Operates efficiently at temperatures ranging from -65°C up to 150°C.
- Peak non-repetitive forward surge current rating of 180 amperes for transient conditions.
- RoHS compliant and suitable for automated assembly processes.
- Package height is a low profile 1.3 mm for compact PCB design.
- Ideal for use in DC/DC converters, freewheeling diode, and polarity protection circuits.
- Single diode configuration housed in a robust TO-252 surface mount package.
Product Description
Vishay V10PW12HM3/I Schottky Barrier Diode is a high current density surface mount device with trench MOS barrier Schottky technology. It operates at a maximum reverse voltage of 120 V and can handle continuous forward currents up to 10 A, making it suitable for demanding electronic power applications.
This single diode configured device is housed in a TO-252 surface mount package with a very low profile height of approximately 1.3 mm, facilitating compact and automated PCB assembly processes. The maximum forward voltage drop of 0.61 V ensures low power losses and high efficiency in circuits.
Designed to operate over a wide temperature range from -65°C to 150°C, this diode is qualified for use in harsh industrial environments. Its peak non-repetitive forward surge current of 180 A provides robustness against transient power surges.
The diode complies with RoHS standards, ensuring environmental compliance. It is ideally suited for low voltage, high frequency DC/DC converters, freewheeling diode applications, and polarity protection in a variety of electronic devices and power management systems.
Trench MOS barrier Schottky technology reduces forward voltage drop and power loss. Surface mount TO-252 package with low profile design for automated placement. Wide operating temperature range from -65°C to 150°C for reliability.
High surge current capacity for transient protection. RoHS compliant component meeting environmental directives. Single diode configuration suitable for DC/DC converter and polarity protection circuits. Ideal for industrial, electronic manufacturing, and power supply applications.
Compact size helps optimize PCB design and assembly efficiency.
This Vishay Schottky Diode model V10PW12HM3/I offers an effective solution for engineers and designers seeking high performance and reliability in surface mounted power diodes. Explore the full Vishay semiconductor portfolio at EnvMart for complementary electronic components.
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Frequently Asked Questions
The maximum continuous forward current of the Vishay V10PW12HM3/I Schottky diode is 10 amperes.
This model has a peak reverse repetitive voltage rating of 120 volts.
It operates efficiently over a temperature range from -65°C to 150°C.
The maximum forward voltage drop for this diode is 0.61 volts.
The peak non-repetitive forward surge current rating is 180 amperes.
It is housed in a TO-252 surface mount package, which has a low profile height of approximately 1.3 mm.
Yes, the Vishay V10PW12HM3/I diode is RoHS compliant, ensuring it meets environmental standards.
This diode is suitable for DC/DC converters, freewheeling diode applications, and polarity protection circuits.
It features a single diode configuration.
The Vishay V10PW12HM3/I belongs to the eSMP series.
It utilizes trench MOS barrier technology, which helps ensure a low forward voltage drop.
The country of origin for this diode is India.
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