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onsemi NTHL N-Channel MOSFET, 58 A Maximum Continuous Drain Current, 1.2 kV Maximum Drain Source Voltage NTHL045N065SC1

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onsemi NTHL N-Channel MOSFET, 58 A Maximum Continuous Drain Current, 1.2 kV Maximum Drain Source Voltage NTHL045N065SC1

Name: onsemi NTHL N-Channel MOSFET, 58 A Maximum Continuous Drain Current, 1.2 kV Maximum Drain Source Voltage NTHL045N065SC1
Brand: onsemi
SKU: 177679
Price: 12.37 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Model	NTHL045N065SC1
Mount Type	Through Hole
Series	NTHL
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	5
Channel Type	N
Maximum Continuous Drain Current Id	58A
Maximum Drain Source Voltage Vds	1.2kV
Maximum Drain Source Resistance Rds	22mΩ
Maximum Power Dissipation Pd	117W
Typical Gate Charge Qg @ Vgs	105nC
Maximum Gate Source Voltage Vgs	22V
Forward Voltage Vf	1.2V

Key Features

The device features a TO-247 package with 5 pins for through-hole mounting.
Maximum drain-source resistance (Rds) is 22 milliohms ensuring efficient conduction.
Typical gate charge is 105 nanocoulombs at Vgs, providing fast switching characteristics.
It supports a maximum power dissipation of 117 watts for high power applications.
Operates reliably in temperatures ranging from -55°C to 175°C for industrial versatility.
Gate-source voltage is rated up to ±22 volts to withstand high gate drive voltages.
Forward voltage is 1.2 volts, optimizing conduction losses.
Compliant with RoHS standards ensuring environmental safety.

Product Description

onsemi NTHL045N065SC1 N-Channel MOSFET is a high-performance discrete semiconductor device designed for demanding power switching and amplification uses. With a 58 ampere maximum continuous drain current and a maximum drain-source voltage of 1.2 kilovolts, this SiC MOSFET provides excellent capability for high voltage and current industrial applications.

The device comes in a durable TO-247 package with 5 pins that enable secure through-hole mounting on printed circuit boards. It features a low on-resistance of 22 milliohms, which minimizes conduction losses and enhances energy efficiency in switching circuits.

The MOSFET has a typical gate charge of 105 nanocoulombs, facilitating fast switching speeds and reduced gate drive power requirements. It can dissipate up to 117 watts of power safely, supporting robust power-handling performance in power electronics, power supplies, and motor drives.

Operation across a wide temperature range of -55 to 175 degrees Celsius makes this MOSFET suitable for diverse environments including industrial, automotive, and manufacturing sectors. The gate-source voltage withstands up to ±22 volts, allowing for high-voltage gate drive designs without damage risk.

Its 1.2-volt forward voltage drop reduces wasted power during conduction, improving overall system efficiency. RoHS compliance guarantees adherence to environmental and safety standards, enabling deployment in green and regulated products.

This MOSFET is ideal for use in power control, energy management, semiconductor circuits, and discrete power component assemblies. Its high voltage, current ratings, and thermal resilience make it a reliable choice for industrial and laboratory applications.

The device supports high-speed switching with low capacitance and gate charge. It ensures increased power density and reduced electromagnetic interference (EMI) in systems. Compact TO-247 package design aids in efficient thermal management and board space savings.

Suitable for power supply circuits, motor control, and energy conversion systems. Explore more semiconductors and discrete MOSFET solutions on EnvMart to elevate your electronic component sourcing experience.