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Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1

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Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1

Name: Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1
Brand: Infineon
SKU: 177429
Price: 3.16 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Length	3.3mm
Model	IQE050N08NM5CGATMA1
Mount Type	Surface
Series	IQE
Maximum Operating Temperature	150°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	253A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	0.85mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	16V
Forward Voltage Vf	730mV

Key Features

Maximum continuous drain current (Id) is 253A ensuring high power handling.
Low maximum drain-source resistance (Rds) of 0.85 milliohms reduces conduction losses.
Maximum drain-source voltage (Vds) of 30 volts suitable for low voltage systems.
Maximum power dissipation rating of 81 watts supports efficient thermal management.
Typical gate charge of 80 nanocoulombs at Vgs enhances switching performance.
Forward voltage drop of 730 millivolts contributes to low power loss.
Operates over a temperature range from -55°C to 150°C supporting harsh environments.
Surface mount package type PQFN enables compact PCB layout and efficient heat dissipation.

Product Description

Infineon IQE050N08NM5CGATMA1 N-Channel MOSFET is engineered for demanding electronic applications requiring high current capacity and low voltage operation. With a maximum continuous drain current of 253 amperes and a drain-source voltage rating of 30 volts, this device suits power management tasks in industrial, automotive, and consumer electronics.

Housed in a compact 8-pin PQFN surface mount package measuring 3.3 mm in length, the device facilitates high power density designs with improved thermal performance. Its low on-resistance (0.85 milliohms) and modest forward voltage drop (730 mV) contribute to efficient conduction and reduced energy loss during operation.

The MOSFET’s typical gate charge of 80 nanocoulombs ensures rapid switching capabilities which improve overall system efficiency and minimize electromagnetic interference. Rated for continuous power dissipation of 81 watts, it supports effective thermal management strategies in compact electronic assemblies.

Certification to automotive standard AEC-Q101 and compliance with RoHS directives underline its reliability and environmental safety. The device can operate safely in extreme temperature conditions ranging from -55°C to 150°C, suitable for automotive and industrial use cases.

Ideal for use in power supplies, DC-DC converters, motor control, and other high-performance switching applications, this model combines performance with compactness and reliability.

Maximum continuous drain current of 253 amperes ensures reliable high current handling. Low on resistance reduces conduction losses and heat generation. Compact 8-pin PQFN package enables smaller PCB footprints and better thermal dissipation.

Wide operating temperature range suits harsh industrial and automotive environments. Compliance with RoHS and AEC-Q101 automotive standards guarantees quality and sustainability. Explore full Infineon MOSFET range at EnvMart to source the best components for your power electronics needs.