Infineon IQE Type N-Channel MOSFET, 253A Continuous Drain Current, 30V Drain Source Voltage, 8-Pin PQFN IQE050N08NM5ATMA1

The Infineon IQE050N08NM5ATMA1 is a Type N-Channel Power MOSFET designed for advanced power management applications requiring high efficiency and reliability.

It is engineered to handle a continuous drain current of up to 253 amperes and withstand a drain source voltage of 30 volts. Housed in an 8-pin PQFN package, it supports surface mount technology enabling integration into compact circuit boards.

This MOSFET features an exceptionally low maximum drain source resistance of 0.85 milliohms which facilitates higher efficiency with reduced conduction losses. The typical gate charge of 80 nanocoulombs enhances switching performance, making it suitable for fast-switching power circuits.

Operating temperature ratings range from a minimum of -55°C to a maximum of 150°C, supporting reliable operation in industrial and automotive environments. The device supports a maximum gate source voltage of 16 volts and has a forward voltage of 0.73 volts, ensuring superior electrical characteristics in demanding applications.

With a maximum power dissipation of 81 watts, it offers increased thermal capability allowing for effective heat management and reduced cooling requirements at the system level.

This MOSFET complies with RoHS directives ensuring environmentally friendly usage and meets the automotive grade standard AEC-Q101, making it suitable for automotive electronic systems and industrial power modules.

Common use cases include power supplies, motor controls, DC-DC converters, automotive electronics, and other high power density applications demanding reliable switching and conduction efficiency.

Capable of maximum continuous drain current of 253 amperes for heavy duty applications. Rated for maximum drain source voltage of 30 volts ensuring robust operation. Features 8-pin PQFN package with surface mount technology for compact PCB integration.

Low maximum drain source resistance of 0.85 milliohms reduces power losses. Designed to operate within a temperature range of -55°C to 150°C for reliability in harsh environments. Supports maximum gate source voltage of 16 volts for safe gate driving.

Typical gate charge of 80 nanocoulombs improves switching speed and efficiency. Maximum power dissipation rated at 81 watts enables high thermal capability. Compliant with RoHS for environmental safety and meets automotive standard AEC-Q101.

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