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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRL60HS118 |
| Mount Type | Surface |
| Series | IRFH |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
The Infineon IRL60HS118 is an N-Channel MOSFET from the IRFH series, engineered for demanding automotive and industrial electronics applications requiring high current and fast switching. It supports a continuous drain current of 11 A and a maximum drain-source voltage of 40 V, making it ideal for mid-voltage power stages. The device dissipates up to 81 W, ensuring excellent thermal management under heavy loads.
This MOSFET is supplied in a compact 8-pin PQFN package designed for surface mounting on printed circuit boards, enabling space-efficient designs. Its ultra-low 0.7mΩ on-resistance significantly reduces conduction losses, improving overall energy efficiency in power distribution modules, DC-DC converters, and motor control stages.
Rated to operate reliably between -55°C and 175°C, the IRL60HS118 MOSFET meets the stringent automotive standard AEC-Q101 and adheres to RoHS compliance for hazardous substance restrictions. The typical gate charge of 80 nC facilitates rapid switching, while the 20 V maximum gate-source voltage provides robust gate drive tolerance. A forward voltage of approximately 1 V further optimizes conduction performance.
Applications include automotive power distribution, industrial load switching, and motor controls requiring rapid switching in compact and thermally demanding environments. The device is well-suited for surface-mount assembly on compact power boards used in automotive and industrial electronics.
Ultra-low on-resistance lowers conduction losses and improves efficiency. High continuous current ensures sustained high-load operation. Wide operating temperature range supports use in harsh environments. Compact surface-mount PQFN package optimizes PCB space.
Compliance with automotive and environmental standards guarantees reliability. Fast switching via low gate charge enhances high-speed circuit performance. Robust gate-drive voltage rating protects device integrity. Low forward voltage reduces power loss during conduction.
Explore the range of Infineon Discrete Semiconductors on EnvMart for reliable, high-performance power solutions tailored to automotive and industrial applications.
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