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Infineon IRFH N-Channel MOSFET, 11 A Continuous Drain Current, 40 V Drain-Source Voltage, 81 W Power Dissipation IRL60HS118

Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IRL60HS118
Mount Type Surface
Series IRFH
Maximum Operating Temperature 175°C
Package Type PQFN
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 11A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Features ultra-low 0.7mΩ on-resistance for improved efficiency.
  • Supports maximum power dissipation of 81 W for robust thermal handling.
  • Operates reliably over the wide temperature range from -55°C to 175°C.
  • Packaged in an 8-pin PQFN surface-mount package for compact PCB integration.
  • Complies with automotive-grade AEC-Q101 and RoHS environmental standards.
  • Typical gate charge of 80 nC enables fast switching suitable for high-speed circuits.
  • Maximum gate-source voltage rating of 20 V ensures gate drive robustness.
  • Forward voltage drop typically 1 V, optimizing conduction efficiency.

Product Description

The Infineon IRL60HS118 is an N-Channel MOSFET from the IRFH series, engineered for demanding automotive and industrial electronics applications requiring high current and fast switching. It supports a continuous drain current of 11 A and a maximum drain-source voltage of 40 V, making it ideal for mid-voltage power stages. The device dissipates up to 81 W, ensuring excellent thermal management under heavy loads.

This MOSFET is supplied in a compact 8-pin PQFN package designed for surface mounting on printed circuit boards, enabling space-efficient designs. Its ultra-low 0.7mΩ on-resistance significantly reduces conduction losses, improving overall energy efficiency in power distribution modules, DC-DC converters, and motor control stages.

Rated to operate reliably between -55°C and 175°C, the IRL60HS118 MOSFET meets the stringent automotive standard AEC-Q101 and adheres to RoHS compliance for hazardous substance restrictions. The typical gate charge of 80 nC facilitates rapid switching, while the 20 V maximum gate-source voltage provides robust gate drive tolerance. A forward voltage of approximately 1 V further optimizes conduction performance.

Applications include automotive power distribution, industrial load switching, and motor controls requiring rapid switching in compact and thermally demanding environments. The device is well-suited for surface-mount assembly on compact power boards used in automotive and industrial electronics.

Ultra-low on-resistance lowers conduction losses and improves efficiency. High continuous current ensures sustained high-load operation. Wide operating temperature range supports use in harsh environments. Compact surface-mount PQFN package optimizes PCB space.

Compliance with automotive and environmental standards guarantees reliability. Fast switching via low gate charge enhances high-speed circuit performance. Robust gate-drive voltage rating protects device integrity. Low forward voltage reduces power loss during conduction.

Explore the range of Infineon Discrete Semiconductors on EnvMart for reliable, high-performance power solutions tailored to automotive and industrial applications.

Infineon IRFH N-Channel MOSFET, 11 A Continuous Drain Current, 40 V Drain-Source Voltage, 81 W Power Dissipation IRL60HS118
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Frequently Asked Questions

The maximum continuous drain current for this model is 11 A.

It has a maximum drain-source voltage rating of 40 V.

This MOSFET can dissipate up to 81 W, ensuring effective thermal management.

The on-resistance is ultra-low at 0.7 mΩ, which helps improve efficiency.

The typical gate charge is 80 nC, facilitating fast switching suitable for high-speed circuits.

It operates reliably over a wide temperature range from -55°C to 175°C.

It is packaged in an 8-pin PQFN surface-mount package, allowing for compact PCB integration.

This model complies with the automotive standard AEC-Q101, ensuring its reliability in automotive applications.

The maximum gate-source voltage rating is 20 V, providing robust gate drive tolerance.

This MOSFET is suitable for automotive power distribution, industrial load switching, and motor controls requiring rapid switching.

It adheres to RoHS environmental standards, which restrict hazardous substances.

The forward voltage drop is typically around 1 V, optimizing conduction efficiency.

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