$3.53
$3.43
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics Type N-Channel Trench Gate Field Stop IGBT 40A 650V 3-Pin TO Through Hole STGWT20H65FB
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | STMicroelectronics |
| Model | STGWT20H65FB |
| Mount Type | Through Hole |
| Series | HB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 168W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Advanced trench gate and field-stop structure for improved conduction and switching efficiencies.
- Maximum power dissipation rating of 168 watts to handle high load conditions.
- Wide operating temperature range from -55°C to 175°C for robust performance.
- Maximum gate-emitter voltage rating of ±20 volts for safe gate control.
- Typical collector-emitter saturation voltage of 1.55 V at 20 A for low conduction losses.
- Lead-free package compliant with RoHS standards for environmental safety.
- Designed for high-speed switching applications to minimize tail current and losses.
- Suitable for industrial, power electronics, and frequency converter applications.
Product Description
STMicroelectronics STGWT20H65FB Type N-Channel Trench Gate Field Stop IGBT is an advanced power semiconductor device designed for efficient power switching and management in industrial and electronic systems.
This device supports a maximum continuous collector current of 40A and a collector-emitter voltage up to 650V, ensuring reliable operation in demanding environments. Its proprietary trench gate and field-stop technology balance conduction and switching losses to optimize frequency converter efficiency.
The device is housed in a 3-pin TO package with through-hole mounting, accommodating robust mechanical integration. It offers a maximum power dissipation of 168W, suitable for high power applications, and operates over a wide temperature range from -55°C to 175°C, enabling use in extreme conditions.
With a maximum gate-emitter voltage of ±20V and a typical collector-emitter saturation voltage of 1.55V at 20A, it guarantees low conduction losses and high switching speed. The device features a slightly positive VCE(sat) temperature coefficient and tight parameter distribution, supporting safe paralleling and stable operation.
This IGBT is compliant with RoHS lead-free standards, making it environmentally friendly. Typical industries that benefit include power electronics manufacturing, industrial automation, HVAC systems, and frequency converter manufacturers.
Advanced trench gate and field-stop structure for efficiency enhancement. High power rating of 168W ensures durability under load. Wide temperature range for reliable operation in harsh environments. Low saturation voltage reduces conduction losses in circuits.
Safe paralleling with tight parameter distribution. Lead-free RoHS compliant packaged device. Suitable for industrial power electronics and frequency converters. Compact 3-pin TO through-hole configuration for easy mounting.
Manufactured in Korea for high quality assurance. Discover more power semiconductor devices and your required components at EnvMart for industrial and electronics applications.
Explore more products in our Discrete Semiconductor category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous collector current for the STMicroelectronics STGWT20H65FB is 40A.
This model has a maximum collector-emitter voltage rating of 650V.
It supports a maximum power dissipation of 168 watts, suitable for high power applications.
The operating temperature range for the STGWT20H65FB is from -55°C to 175°C.
The typical collector-emitter saturation voltage is 1.55V at 20A.
It is designed for through-hole mounting in a 3-pin TO package.
The maximum gate-emitter voltage rating for this model is ±20 volts.
Yes, it is compliant with RoHS standards, making it lead-free and environmentally safe.
This IGBT is suitable for industrial applications, power electronics, and frequency converters.
The pin count for the STGWT20H65FB is 3.
This device is manufactured in Korea, ensuring high quality assurance.
It features a Type N channel design.
Related Products
$0.67
$0.65
-3%
New
Other Products from this brand
$0.69
$0.67
-3%
New
$0.57
$0.55
-3%
New
$1.44
$1.40
-3%
New
$1.89
$1.83
-3%
New
Recently Viewed Products
$36.41
$35.32
-3%
New
$3.53
$3.43
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent