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onsemi Type N-Channel IGBT 120 A 600 V 3-Pin TO-247AB Through Hole FGH60N60SMD

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onsemi Type N-Channel IGBT 120 A 600 V 3-Pin TO-247AB Through Hole FGH60N60SMD

Name: onsemi Type N-Channel IGBT 120 A 600 V 3-Pin TO-247AB Through Hole FGH60N60SMD
Brand: onsemi
SKU: 103984
Price: 6.15 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Model	FGH60N60SMD
Mount Type	Through Hole
Series	Field Stop 2nd generation
Maximum Operating Temperature	175°C
Package Type	TO-247AB
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS Compliant
Pin Count	3
Maximum Continuous Collector Current Ic	120A
Maximum Collector Emitter Voltage Vceo	600V
Maximum Collector Emitter Saturation Voltage VceSAT	1.9V
Channel Type	Type N
Maximum Power Dissipation Pd	600W
Maximum Gate Emitter Voltage VGEO	20 V
onsemi, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through HoleBrand	onsemi

Key Features

Features a 3-pin TO-247AB package suitable for through-hole mounting.
Maximum continuous collector current of 120 amperes for high power applications.
Maximum collector emitter voltage rating of 600 volts ensures reliability.
Handles maximum power dissipation of 600 watts during operation.
Supports a maximum gate emitter voltage of 20 volts for gate control.
Operating temperature range from -55°C to 175°C for stable performance.
Type N channel for use in various power control circuits.
Low saturation voltage of 1.9 V enables efficient power switching.

Product Description

onsemi FGH60N60SMD Type N-Channel IGBT is a high-efficiency power semiconductor device housed in a TO-247AB 3-pin package designed for through-hole mounting. It combines the simple gate drive characteristics of MOSFETs with the high current capacity and low saturation voltage of bipolar transistors, making it ideal for industrial, electronic, and power management applications.

This device supports a maximum continuous collector current of 120 A and a maximum collector emitter voltage of 600 V with a maximum power dissipation of 600 W, ensuring robust operation in demanding conditions. Its wide operating temperature range from -55°C to 175°C gives it the versatility to be deployed in environments with varying thermal challenges.

Key electrical features include a maximum gate emitter voltage of 20 V and a low collector emitter saturation voltage of 1.9 V, which enables efficient and fast switching capabilities. The discrete IGBT belongs to onsemi's Field Stop 2nd generation series, designed for improved switching performance and durability.

This component is RoHS compliant, confirming adherence to environmental and safety standards. It is manufactured in China, maintaining consistent quality and performance. Features a 3-pin TO-247AB package designed for through-hole mounting.

Maximum continuous collector current of 120 A supports high current loads. Collector emitter voltage rating up to 600 V for high voltage applications. Power dissipation capability of 600 W ensures reliable performance. Operating temperature from -55°C to 175°C.

Low saturation voltage at 1.9 V for efficient power switching. Type N Channel suitable for various industrial electronics. RoHS compliant for environmental safety. Part of the Field Stop 2nd generation series. Manufactured in China.

This onsemi IGBT is widely used in industrial power control systems, electronic manufacturing, automotive electronics, and other semiconductor applications requiring robust and efficient switching devices. Suitable for engineers and designers focused on reliability and performance in power electronics.

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