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Taiwan Semiconductor P-Channel MOSFET Type 3 A 30 V Enhancement Mode 3-Pin SOT-23 TSM2307CX RFG
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 1.2mm |
| Length | 3.1mm |
| Model | TSM2307CX RFG |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
| Infineon HEXFET Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23Brand | Infineon |
Key Features
- Operates in enhancement mode to control conductive channel effectively.
- Features low maximum drain-source resistance of 140 milliohms for efficient power use.
- Supports maximum power dissipation of 1.25 watts ensuring durable performance.
- Designed for surface-mount assembly with 3-pin configuration in a compact 3.1mm length package.
- Operating temperature range from -55°C to 150°C suitable for various environments.
- Includes typical gate charge specification of 10 nanocoulombs for switching efficiency.
- Maximum gate-source voltage rated at 20 volts ensuring structural reliability.
- Forward voltage of -1.2 volts enhances switching performance and protects circuitry.
Product Description
Taiwan Semiconductor TSM2307CX RFG is a P-Channel MOSFET designed to handle a maximum continuous drain current of 3 amps and withstand a drain-source voltage up to 30 volts. Its enhancement mode operation provides reliable and efficient switching control integrated into a SOT-23 surface-mount package that is widely used in compact electronic circuits.
This device features a low maximum drain-source resistance of 140 milliohms, contributing to reduced power loss and improved efficiency in low voltage power management applications. It supports a maximum power dissipation rating of 1.25 watts, enabling stable performance under moderate load conditions.
The MOSFET has a typical gate charge of 10 nanocoulombs at standard gate-source voltage, optimizing switching speed versus power consumption. With a maximum gate-source voltage rating of 20 volts, the component ensures robust performance and protection against voltage spikes.
Its physical package dimensions (length 3.1mm, width 1.7mm, height 1.2mm) allow integration in tightly packed devices where board space and weight are critical. The temperature range from -55°C to 150°C allows use in a variety of industrial and automotive environments.
Common applications include electronic power regulation, switching circuits, battery management, and protection circuits in consumer electronics, automotive electronics, and industrial equipment.
Operates with a low forward voltage of -1.2 V improving switching efficiency. Surface mount type suitable for automated assembly on printed circuit boards. 3-pin SOT-23 package balances compact size with easy integration.
Meets typical quality requirements without specific approvals or automotive certification.
This P-Channel MOSFET is an essential component choice for engineers designing efficient and reliable power circuits in electronics and electrical engineering projects. It supports a wide range of demanding use cases in industry and technology development.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 amps.
It can withstand a maximum drain-source voltage of 30 volts.
The typical gate charge is 10 nanocoulombs at standard gate-source voltage.
The package dimensions are 3.1mm in length, 1.7mm in width, and 1.2mm in height.
It supports a maximum power dissipation of 1.25 watts.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage is rated at 20 volts.
It is designed for surface-mount assembly.
The maximum drain-source resistance is 140 milliohms.
This model features a P-channel type configuration.
Common applications include electronic power regulation, switching circuits, and battery management.
The forward voltage is -1.2 volts, which enhances switching performance.
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