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DiodesZetex PNP Transistor 150 mA, 500 V, 4-Pin SOT-223 Package FZT560TA

Category Discrete Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.7mm
Length 6.7mm
Model FZT560TA
Width 7.3mm
Mount Type Surface
Series FZT560
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -500V
Minimum DC Current Gain hFE 80
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 500V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -150mA
Transistor Configuration Single
Maximum Transition Frequency ft 60MHz

Key Features

  • Maximum DC collector current of -150 mA for efficient current handling.
  • Collector emitter voltage rated at -500 V ensuring high voltage operation.
  • Surface mount SOT-223 package minimizes PCB space consumption.
  • Single transistor configuration suited for discrete semiconductor applications.
  • High operating temperature range from -55°C to 150°C for robust performance.
  • Maximum power dissipation rated at 2 W for safe thermal management.
  • Pin count of 4 facilitates easy PCB layout and connection design.
  • Automotive standard AEC-Q101 compliant, suitable for automotive electronics.

Product Description

DiodesZetex FZT560TA is a PNP bipolar transistor designed for applications requiring moderate current and high-voltage switching capabilities. Featuring a 4-Pin SOT-223 surface mount package, this transistor is ideal for compact, high-reliability circuits in industrial, automotive, and electronic manufacturing domains.

The transistor supports a maximum DC collector current of -150 mA and a collector emitter voltage of -500 V, making it suitable for various load control, signal amplification, and switching tasks. Its robust operating temperature range of -55°C to 150°C ensures consistent performance in demanding environments including automotive electronics following the AEC-Q101 standard.

With a maximum power dissipation of 2 W and a gain (hFE) minimum of 80, this device delivers reliable amplification within compact electronic assemblies. The 60 MHz transition frequency enables adequate switching speed for many control and driver circuit designs.

Compact dimensions and surface mount package style optimize printed circuit board layouts, reducing overall system size. The transistor's pin configuration and mounting type facilitate automated PCB assembly processes, enhancing production efficiency in electronics manufacturing.

Maximum DC collector current of -150 mA to handle moderate current loads. Collector emitter voltage rating of -500 V for high voltage operation. 4-Pin SOT-223 package for space-saving surface mount applications. Compliant with automotive standard AEC-Q101 suitable for automotive electronics.

Operating temperature range from -55°C to 150°C supports diverse environments. Maximum power dissipation of 2 W ensures safe thermal operation. Typical transition frequency of 60 MHz for general-purpose switching tasks. Length 6.7 mm, width 7.3 mm, height 1.7 mm for compact integration.

This transistor finds extensive use in industrial power control, electronic equipment maintenance, automotive control modules, and various laboratory applications where reliable switching and amplification under high voltage and temperature conditions are required. Explore related DiodesZetex semiconductor products and solutions on EnvMart for your electronic components needs.

Explore more products in our Discrete Semiconductor category.

DiodesZetex PNP Transistor 150 mA, 500 V, 4-Pin SOT-223 Package FZT560TA
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Frequently Asked Questions

The maximum DC collector current for this model is -150 mA, allowing for efficient current handling in various applications.

The collector emitter voltage rating is -500 V, ensuring high voltage operation suitable for demanding applications.

It comes in a 4-Pin SOT-223 surface mount package, with dimensions of 6.7 mm in length, 7.3 mm in width, and 1.7 mm in height.

The operating temperature range is from -55°C to 150°C, supporting robust performance in various environments.

The maximum power dissipation is rated at 2 W, ensuring safe thermal management during operation.

The minimum DC current gain (hFE) is 80, which supports reliable amplification in electronic circuits.

Yes, it is compliant with the AEC-Q101 automotive standard, making it suitable for automotive electronics applications.

The typical transition frequency is 60 MHz, allowing for adequate switching speed in control and driver circuit designs.

This model utilizes a single transistor configuration, making it suitable for discrete semiconductor applications.

The maximum emitter base voltage (VEBO) is 5 V, which is important for ensuring proper operation within specified limits.

The maximum collector base voltage (VCBO) is rated at 500 V, suitable for high voltage applications.

The country of origin for this model is India, indicating its manufacturing location.

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