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onsemi Type P-Channel IGBT 40 A 1200 V 4-Pin TO-247 Through Hole FGH40T120SQDNL4
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Model | FGH40T120SQDNL4 |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.78V |
| Channel Type | Type P |
| Maximum Power Dissipation Pd | 227W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Features Ultra Field Stop Trench construction for superior efficiency and low on-state voltage.
- Includes a soft and fast co-packaged free wheeling diode with low forward voltage.
- Optimized for high-speed switching with a maximum power dissipation of 227 W.
- Packaged in a 4-pin TO-247 through hole format for easy mounting and robust connectivity.
- Operates reliably within a temperature range from -55°C to 175°C.
- Complies with RoHS standards ensuring environmental safety.
- Ideal for solar inverter, UPS, and welding industrial applications.
- Provides a maximum gate emitter voltage rating of ±30 V and a saturation voltage of 1.78 V.
Product Description
onsemi FGH40T120SQDNL4 Type P-Channel IGBT is a robust and efficient semiconductor designed for high power switching with a maximum continuous collector current of 40 A and collector emitter voltage of 1200 V. This device employs Ultra Field Stop Trench technology, offering both extremely low on-state voltages and minimal switching loss, making it suitable for industrial, solar inverter, UPS, and welding equipment applications.
The transistor comes in a 4-pin TO-247 through hole package, facilitating secure mounting and excellent heat dissipation. Integrated within the device is a soft and fast reverse recovery free wheeling diode with low forward voltage, enhancing overall switching efficiency and reliability.
Designed to operate within a broad temperature range from -55°C minimum to a maximum of 175°C, and compliant with RoHS environmental standards, this IGBT supports demanding operating conditions in manufacturing and power electronics systems. It features a maximum gate emitter voltage of ±30 V and a collector emitter saturation voltage of 1.78 V, highlighting its stable electrical characteristics under load.
Typical industrial use cases include applications in solar inverters, uninterrupted power supplies (UPS), and welding equipment where reliable, high-speed switching performance is critical for system efficiency and durability.
Features Ultra Field Stop Trench construction for superior efficiency and low on-state voltage. Includes a soft and fast co-packaged free wheeling diode with low forward voltage. Optimized for high speed switching with a maximum power dissipation of 227 W.
Packaged in a 4-pin TO-247 through hole format for easy mounting and robust connectivity. Operates reliably within a temperature range from -55°C to 175°C. Complies with RoHS standards ensuring environmental safety. Ideal for solar inverter, UPS, and welding industrial applications.
Provides a maximum gate emitter voltage rating of ±30 V and a saturation voltage of 1.78 V. Discover a wide range of semiconductors and discrete components like this onsemi IGBT at EnvMart to enhance your industrial and electronic projects with dependable performance.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
This model has a maximum continuous collector current of 40 A.
It has a collector emitter voltage rating of 1200 V.
This IGBT operates reliably within a temperature range from -55°C to 175°C.
The maximum power dissipation for this model is 227 W.
It is packaged in a 4-pin TO-247 through hole format.
The collector emitter saturation voltage is 1.78 V.
This model has a maximum gate emitter voltage rating of ±30 V.
It includes a soft and fast co-packaged free wheeling diode with low forward voltage.
It complies with RoHS standards, ensuring environmental safety.
This IGBT is ideal for applications in solar inverters, UPS, and welding equipment.
It employs Ultra Field Stop Trench technology for superior efficiency and low on-state voltage.
The country of origin for this model is China.
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