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Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN IQE008N03LM5ATMA1

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Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN IQE008N03LM5ATMA1

Name: Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN IQE008N03LM5ATMA1
Brand: Infineon
SKU: 177427
Price: 3.09 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Length	3.3mm
Model	IQE008N03LM5ATMA1
Mount Type	Surface
Series	IQE
Maximum Operating Temperature	150°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	253A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	0.85mΩ
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	16V
Forward Voltage Vf	730mV

Key Features

High continuous drain current rating of 253 A enables heavy load applications.
Low on-resistance with 0.85 mΩ maximum drain-source resistance improves efficiency.
Compact 3.3 mm length 8-pin PQFN surface-mount package offers compactness and easy PCB layout.
Typical gate charge of 80 nC at Vgs simplifies driving requirements.
Maximum power dissipation of 81 W allows thermal robustness in demanding conditions.
Wide operating temperature range from −55°C to 150°C supports automotive and industrial use.
Complies with RoHS and automotive AEC-Q101 standards ensuring quality and reliability.
Maximum gate-source voltage rating of 16 V and forward voltage of 730 mV.

Product Description

The Infineon IQE008N03LM5ATMA1 is an N-Channel MOSFET designed for high-performance electronic applications. Featuring a maximum continuous drain current of 253 A and a maximum drain-source voltage of 30 V, this device ensures robust operation in power demanding environments.

Its 8-pin PQFN surface mount package has a compact length of 3.3 mm, enabling high power density and efficient PCB layouts. The low maximum drain-source resistance of 0.85 mΩ improves energy efficiency by reducing conduction losses.

Typical gate charge measured at 80 nC facilitates effective switching control while supporting reduced gate drive power. The MOSFET can dissipate up to 81 W, offering reliable thermal management during intensive operation, which is further enhanced by the device's wide operating temperature range from -55°C to 150°C.

This component meets RoHS environmental standards and automotive AEC-Q101 qualification, making it suitable for automotive and industrial applications requiring high reliability. The maximum gate-source voltage is rated at 16 V, and the forward voltage is 730 mV.

Typical use cases include power management in automobiles, industrial motor drives, and high-current switching systems where compact form factor and efficiency are critical. High continuous drain current supports heavy load handling.

Low on-resistance minimizes conduction losses. Compact surface mount package supports dense PCB design. Robust thermal dissipation supports intensive operation. Wide operating temperature ensures automotive and industrial suitability.

Compliance with RoHS and AEC-Q101 standards guarantees quality and reliability. Optimized gate charge and voltage ratings for efficient switching. Forward voltage suitable for power electronics applications. Explore more Infineon MOSFETs and power semiconductors on EnvMart for reliable industrial and automotive solutions.