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Vishay E N-Channel Power MOSFET 21 A, 650 V Depletion Mode, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHK125N60E-T1-GE3 |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerPAK 10 x 12 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.109Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 132W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- High-voltage 650 V drain-source voltage for robust system designs.
- Supports continuous drain current up to 21 A for substantial load handling.
- Low on-resistance of 0.109 Ω reduces conduction losses effectively.
- Power dissipation rating of 132 W enables excellent thermal management.
- Depletion mode N-channel MOSFET optimized for demanding power-conversion applications.
- Surface-mount PowerPAK 10 x 12 package facilitates compact board layout.
- Typical gate charge of 54 nC ensures fast switching performance.
- Gate-source voltage tolerance up to 30 V supports aggressive drive schemes.
Product Description
Vishay SIHK125N60E-T1-GE3 is a high-voltage N-Channel Power MOSFET designed to deliver reliable performance in industrial, automotive, and power conversion systems. It supports a continuous drain current of 21 A and withstands drain-source voltages up to 650 V.
This depletion mode MOSFET features a low on-resistance (Rds(on)) of 0.109 Ω, reducing conduction losses and allowing efficient power management. Its PowerPAK 10 x 12 surface-mount package enables space-efficient PCB layouts suitable for dense board assemblies.
The device offers a maximum power dissipation of 132 W, allowing for higher thermal headroom in demanding applications. With a typical gate charge of 54 nC at Vgs, it balances switching speed with low gate drive requirements. The gate-source voltage tolerance of 30 V permits robust drive schemes necessary for various power electronics topologies.
Operating safely over a wide temperature range from -55 °C to +150 °C, this MOSFET is suitable for harsh environments often encountered in automotive and industrial applications. Compliant with RoHS directives and meeting the stringent AEC-Q101 automotive standard, it is ideal for automotive electronics requiring high reliability and quality certification.
Typical applications include high-voltage DC-DC converters in industrial systems, on-board automotive power distribution modules, motor drive stages, telecommunications power supplies, and implementations such as half-bridge or synchronous rectifiers.
High voltage tolerance for 650 V applications. Continuous 21 A drain current capability. Low Rds(on) conduction resistance. Supports extended thermal and operational conditions. Compact, surface-mount PowerPAK 10 x 12 package.
Fast switching due to low gate charge. Robust gate-source voltage handling. Automotive compliant with AEC-Q101. RoHS compliant for environmental safety.
This Vishay power MOSFET is a reliable choice for engineers seeking a robust, compact, and efficient transistor to handle demanding power switching applications. Explore further components and related products in the Power MOSFET category on EnvMart for comprehensive design options.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SIHK125N60E-T1-GE3 is 21 A.
It can withstand a maximum drain-source voltage of 650 V.
The on-resistance (Rds(on)) of this model is 0.109 Ω.
The power dissipation rating is 132 W, allowing for effective thermal management.
It is housed in a PowerPAK 10 x 12 surface-mount package.
The typical gate charge at Vgs is 54 nC, which facilitates fast switching performance.
The gate-source voltage tolerance is up to 30 V.
This MOSFET operates safely over a temperature range from -55 °C to +150 °C.
Yes, it meets the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.
It is RoHS compliant, adhering to environmental safety standards.
This model is suitable for high-voltage DC-DC converters, automotive power distribution modules, and motor drive stages.
This MOSFET has 8 pins.
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