Vishay E N-Channel Power MOSFET 6.4 A 650 V Enhancement Mode 3-Pin TO-220AB SIHP690N60E-GE3

Vishay SIHP690N60E-GE3 is an enhancement-mode E-type N-Channel Power MOSFET designed for use in industrial electronic switching and power conversion systems. It supports a maximum continuous drain current of 6.4 A and a maximum drain-source voltage of 650 V, enabling its application in moderate to high-voltage circuits. The device is housed in a TO-220AB through-hole package that supports reliable PCB mounting and straightforward heatsink attachment, facilitating efficient thermal management in demanding installations.

This MOSFET exhibits a maximum drain-source resistance (Rds(on)) of 700 mΩ, thereby reducing power loss and improving efficiency during conduction. It delivers a maximum power dissipation rating of 62.5 W, accommodating substantial heat output. The typical gate charge of 12 nC promotes faster switching speeds while requiring moderate gate drive strength, making it suitable for compact driver circuits.

Designed to operate within a broad temperature range from -55°C to 150°C, the SIHP690N60E-GE3 can withstand harsh industrial and commercial environments. It is well-suited for offline power supplies, motor-drive gate stages, inverter switching, and discrete switch-mode power supplies used in industrial equipment. The device is not qualified for automotive standards but is ideal for general industrial and laboratory applications.

Key features include a maximum gate-source voltage rating of 30 V allowing flexible gate drive voltage levels and a forward voltage of 1.2 V. Its through-hole mounting format enhances ease of manual assembly and thermal dissipation through conventional heatsinks. The component complies with RoHS standards, ensuring environmentally responsible manufacturing.

Maximum continuous drain current of 6.4 A. High drain-source voltage rating of 650 V. Enhancement mode N-channel operation. TO-220AB package for robust mounting and cooling. Low 700 mΩ on-resistance reduces conduction losses.

Power dissipation rating of 62.5 W supports thermal management. Gate charge of 12 nC for efficient switching. Wide operating temperature from -55°C to 150°C. RoHS compliant manufacturing.

This product is suitable for industrial, commercial, and laboratory electronic system designs requiring reliable and efficient power switching performance. Its construction supports integration into power supply units, motor control, and inverter circuits where reliable high-voltage switching is critical.

Explore EnvMart’s extensive Semiconductor category for more Vishay Power MOSFETs and related components to fulfill your electronic design and production requirements.