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Vishay E N-Channel Power MOSFET, 13 A Continuous Drain Current, 800 V Drain Source Voltage, Enhancement SIHB15N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.06mm |
| Length | 14.61mm |
| Model | SIHB15N80AE-GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 304mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports maximum continuous drain current of 13 A for substantial load currents.
- Rated for a maximum drain-source voltage of 800 V, enabling high-voltage switching.
- Features low on-resistance of 304 milliohms reducing conduction losses.
- Can dissipate up to 156 W, allowing effective thermal management.
- Operates from -55°C to 150°C, suitable for wide temperature ranges.
- Typical gate charge is 35 nC, ensuring predictable gate-drive requirements.
- Gate voltage tolerance of ±30 V protects against gate oxide damage.
- Exhibits a forward voltage of approximately 1.2 V during body diode conduction.
Product Description
Vishay SIHB15N80AE-GE3 is a high-voltage E-series N-Channel Power MOSFET designed for advanced surface-mounted power conversion and control applications. It supports continuous drain current of 13 A and withstands drain-source voltages up to 800 V with enhancement mode operation. This device is housed in a 3-pin TO-263 package providing a low-profile thermal path to PCB copper for optimized heat dissipation.
Engineered to perform reliably across a broad temperature range from -55°C to 150°C, it is suitable for industrial motor drives, switch-mode power supplies, welding power control modules, and high-voltage inverter applications. The transistor’s low on-resistance of 304 milliohms minimizes conduction losses, improving efficiency in power switching systems.
The typical gate charge of 35 nanocoulombs allows precise gate-drive sizing while the maximum gate-source voltage of 30 V ensures robust operation without damage to the gate oxide. The intrinsic body diode presents a forward voltage of approximately 1.2 V under reverse conduction conditions, enabling reliable operation in inverter topologies and other switching circuits.
This MOSFET complies with RoHS environmental requirements, reflecting its suitability for modern electronics manufacturing standards. Maximum continuous drain current: 13 A supports high load currents. Drain-source voltage rating of 800 V enables versatile high-voltage applications.
TO-263 package enhances thermal management on PCB layouts. Operates reliably between -55°C to 150°C ambient temperatures. Low on-resistance (304 mΩ) reduces conduction losses. Gate charge and voltage tolerance provide efficient switching control.
Body diode forward voltage of 1.2 V ensures safe reverse conduction.
This power MOSFET is ideal for industrial, commercial, and electronic converter systems requiring efficient high-voltage switching. Explore more Power MOSFET options and solutions at EnvMart to meet your semiconductor needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 13 A, allowing it to handle substantial load currents effectively.
This model is rated for a maximum drain-source voltage of 800 V, making it suitable for high-voltage applications.
The on-resistance of this device is 304 milliohms, which helps to reduce conduction losses during operation.
It can dissipate up to 156 W, allowing for effective thermal management in various applications.
This MOSFET operates reliably across a temperature range from -55°C to 150°C, suitable for various environments.
The typical gate charge is 35 nanocoulombs, which facilitates predictable gate-drive requirements.
The maximum gate-source voltage tolerance is ±30 V, which protects against gate oxide damage during operation.
This model is housed in a TO-263 package, which enhances thermal management on PCB layouts.
The forward voltage during body diode conduction is approximately 1.2 V, enabling reliable operation in switching circuits.
The dimensions of this unit are 14.61 mm in length, 9.65 mm in width, and 4.06 mm in height.
This power MOSFET complies with RoHS environmental requirements, reflecting its suitability for modern electronics manufacturing.
It is suitable for industrial motor drives, switch-mode power supplies, welding power control modules, and high-voltage inverter applications.
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