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$19.36
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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 15.9mm |
| Model | IPZA65R018CFD7XKSA1 |
| Width | 5.1mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247-4 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 106A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Maximum Power Dissipation Pd | 446W |
| Typical Gate Charge Qg @ Vgs | 234nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPZA65R018CFD7XKSA1 CoolMOS N-Channel MOSFET is engineered for high power and high efficiency applications in demanding industrial environments. With a continuous drain current capacity of 106 A and a voltage rating of 700 V, this device is highly suitable for power conversion systems, including servers, telecommunications, solar power inverters, and electric vehicle charging infrastructure.
The MOSFET features an advanced super junction structure including an integrated fast body diode, which enhances switching speed and reduces power losses. It excels in providing high efficiency during heavy and light loads alike, thereby optimizing energy consumption in switch mode power supplies (SMPS).
The device is housed in a 4-Pin TO-247-4 package designed for through-hole mounting, facilitating solid mechanical and thermal coupling for heat dissipation. Operating temperature ranges from -55°C to 150°C make it reliable across diverse industrial environments.
Excellent hard-commutation ruggedness ensures robustness under high switching stress. Extra safety margin for designs requiring higher bus voltages enhances reliability. Enables significant power density improvements, critical for compact, high-performance power systems.
Outstanding efficiency at light loads reduces operational costs and thermal stress. Competitive pricing offers cost-effective solution for OEMs and system integrators. Typical gate charge of 234 nC at Vgs ensures swift switching responsiveness.
Max Rds(on) of 18 milliohms minimizes conduction losses. Forward voltage of 1 V supports efficient conduction during forward operation.
Ideal for industrial power electronics, laboratory equipment, manufacturing automation, and high power commercial applications, Infineon's IPZA65R018CFD7XKSA1 offers a reliable and efficient solution to increase system performance and energy savings.
Explore more advanced semiconductor solutions in the Infineon CoolMOS series for comprehensive power management and control applications.
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