Infineon ISC N-Channel MOSFET 230 A 100 V 8-Pin SuperSO8 5 x 6 ISC022N10NM6ATMA1

Infineon ISC022N10NM6ATMA1 is a robust N-Channel MOSFET designed for high-current switching applications requiring reliability and efficiency. Featuring a 100 V maximum drain-source voltage and continuous drain current rating of 230 A, this MOSFET exemplifies high-performance capabilities in a compact 8-pin SuperSO8 5 x 6 mm surface-mount package. Operating over a wide temperature range from -55°C up to 175°C, it is perfect for demanding industrial environments.

This device offers a low RDS(on) value of 2.24 mΩ to minimize conduction losses, allowing for high efficiency during power switching tasks. Its maximum power dissipation capability of 245 W ensures the device can sustain heavy power loads without thermal failure. The typical gate charge of 91 nC facilitates efficient and rapid switching, minimizing energy losses and enhancing overall circuit performance.

Compatible with common gate drive voltages up to 20 V, the MOSFET’s forward voltage drop of approximately 1 V further optimizes operational efficiency. The N-channel polarity supports versatile switching topologies including low-side and high-side configurations.

Applications include use in high-power DC-DC converters, telecommunications and server power modules, motor control circuits requiring high continuous current, battery management systems, and power inverters or welding controllers. Its compact, surface-mount SuperSO8 package fits modern PCB footprints needing space efficiency and reliability.

Supports high current loads with a maximum continuous drain current of 230 A. Rated for high-voltage switching with a drain-source voltage of 100 V. Low on-resistance of 2.24 mΩ reduces conduction losses efficiently. Maximum power dissipation of 245 W ensures sustained operation under heavy loads.

Typical gate charge of 91 nC enables fast and efficient switching transitions. Wide operating temperature range from -55°C to 175°C for robust thermal environments. Compact 8-pin SuperSO8 5 x 6 mm surface-mount package for space-saving PCB layout.

Maximum gate-source voltage of 20 V compatible with common drive voltages. Forward voltage drop of 1 V for optimized power efficiency.

Select the Infineon ISC022N10NM6ATMA1 MOSFET for high-performance semiconductor solutions in industrial, telecommunications, automotive, and power management applications. Explore more semiconductor devices and electronic components at EnvMart for comprehensive procurement needs.