Infineon ISC N-Channel MOSFET, 31 A, 100 V, 8-Pin TDSON Package ISC230N10NM6ATMA1

Infineon ISC230N10NM6ATMA1 N-Channel MOSFET is a high-performance surface-mounted power transistor designed for medium-voltage switching applications, supporting a maximum continuous drain current of 31 A and a drain-source voltage up to 100 V.

This device is housed in a compact 8-pin TDSON package with a low-profile rectangular form factor measuring 6.1 mm in length, 5.35 mm in height, and 1.2 mm in width, making it ideal for dense PCB layouts.

With a low maximum drain-source resistance of 8.05 milliohms, the MOSFET reduces conduction losses during high-current operation to ensure energy efficiency. Its typical gate charge of 24 nanocoulombs facilitates faster switching speeds suitable for high-frequency power conversion.

The tolerance to a wide ambient temperature range from -55°C up to 175°C allows use in demanding industrial, automotive, or power management environments. It can dissipate up to 100 watts of power, supporting applications requiring sustained thermal loads.

This MOSFET is optimized for use in DC-DC converter output stages, motor-driver half-bridge configurations in compact inverters, and power supplies requiring efficient switching elements. It supports gate-source voltages up to 20 V for flexible gate drive design.

Compact 8-pin TDSON package for space-efficient surface mounting. 31 A maximum continuous drain current for high load applications. 100 V maximum drain-source voltage for medium-voltage switching. Low 8.05 mΩ drain-source resistance reduces conduction losses.

24 nC typical gate charge enables fast switching performance. Wide operating temperature range from -55°C to 175°C. Maximum power dissipation of 100 W supports sustained operation. 1 V forward voltage improves conduction efficiency.

Designed for industrial, automotive, and power management uses. Explore more semiconductor components and MOSFETs at EnvMart for your industrial and electronics projects.