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Infineon ISC N-Channel MOSFET, 179 A Continuous Drain Current, 100 V Drain Source Voltage, 8-Pin TDSON ISC030N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 3.8mm |
| Model | ISC030N10NM6ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 179A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.8mΩ |
| Maximum Power Dissipation Pd | 75W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports continuous drain current up to 179 A for heavy load applications.
- Withstands drain source voltage of 100 V, enabling high voltage switching.
- Features low on-resistance of 2.8 milliohms to reduce conduction losses.
- High power dissipation capability of 75 W for sustained thermal management.
- Fast switching with typical gate charge of 38 nC at Vgs.
- Robust gate source voltage rating of 20 V for reliable operation.
- Operates across a wide temperature range from -55°C to 175°C for extreme environment use.
- Supplied in compact 8-pin TDSON surface-mount package for efficient board assembly.
Product Description
Infineon ISC030N10NM6ATMA1 is a rugged N-channel MOSFET designed for industrial and commercial power switching applications requiring high current and voltage handling. It supports a maximum continuous drain current of 179 A and a maximum drain source voltage of 100 V, packaged in an 8-pin TDSON surface mount to enable compact PCB designs.
This device offers a low maximum drain source resistance of 2.8 milliohms, minimizing conduction losses and improving energy efficiency in power switching circuits. It can dissipate up to 75 W of power, allowing stable operation under demanding thermal conditions. The MOSFET supports fast switching applications with a typical gate charge of 38 nC at gate-source voltage, and its maximum gate-source voltage rating is 20 V, ensuring robust driver headroom.
The operating temperature range from -55°C to 175°C enables use in harsh industrial and automotive environments where temperature extremes are a concern. Its forward voltage of 1 V supports efficient power management. The 8-pin TDSON package supports surface mounting suitable for automated PCB assembly processes.
Common applications include high-current DC-DC converters in power supplies, motor drive switching stages requiring rapid gate response, synchronous rectifiers in power management systems, and automotive control electronics that demand reliable thermal performance. This MOSFET is also well suited for server power supply units and telecommunications power modules.
Supports continuous drain current up to 179 A for heavy load applications. Withstands drain source voltage of 100 V, enabling high voltage switching. Features low on-resistance of 2.8 milliohms to reduce conduction losses.
High power dissipation capability of 75 W for sustained thermal management. Fast switching with typical gate charge of 38 nC at Vgs. Robust gate source voltage rating of 20 V for reliable operation. Operates across a wide temperature range from -55°C to 175°C for extreme environment use.
Supplied in compact 8-pin TDSON surface-mount package for efficient board assembly. Forward voltage drop of 1 V ensures efficient conduction performance. Ideal for power supply DC-DC converters, motor-drive stages, synchronous rectifiers, and automotive control systems.
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Frequently Asked Questions
The Infineon ISC030N10NM6ATMA1 supports a maximum continuous drain current of 179 A, making it suitable for heavy load applications.
This model can withstand a maximum drain source voltage of 100 V, enabling high voltage switching capabilities.
The MOSFET features a low maximum drain source resistance of 2.8 milliohms, which helps reduce conduction losses.
It has a maximum power dissipation capability of 75 W, allowing for sustained thermal management under demanding conditions.
The typical gate charge for this model is 38 nC at the gate-source voltage, enabling fast switching applications.
This MOSFET has a robust maximum gate-source voltage rating of 20 V, ensuring reliable operation.
It operates across a wide temperature range from -55°C to 175°C, suitable for extreme environments.
The dimensions of the 8-pin TDSON package are 4.4 mm in height, 3.8 mm in length, and 1.1 mm in width.
Common applications include high-current DC-DC converters, motor drive switching stages, synchronous rectifiers, and automotive control electronics.
The forward voltage drop is 1 V, which supports efficient conduction performance.
It is supplied in a compact 8-pin TDSON surface-mount package, suitable for automated PCB assembly processes.
This model features an N-channel configuration, which is commonly used in power switching applications.
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