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Infineon ISC N-Channel MOSFET, 97 A, 100 V, Surface Mount, 8-Pin TDSON Package ISC060N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISC060N10NM6ATMA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 97A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports high-current switching with 97 A maximum continuous drain current.
- Operates at a maximum drain-source voltage of 100 V for robust power handling.
- Surface mount TDSON package with 8 pins eases PCB assembly and thermal management.
- Maximum drain-source resistance of 6 mΩ reduces conduction losses effectively.
- Typical gate charge of 33 nC enables efficient gate drive design.
- Maximum power dissipation of 125 W supports sustained operation in demanding environments.
- Wide operating temperature range from -55°C to 175°C for industrial reliability.
- Maximum gate-source voltage rating of 20 V protects against overdrive damage.
Product Description
Infineon ISC060N10NM6ATMA1 is an advanced N-Channel MOSFET designed for high-performance power conversion and switching applications. With a maximum continuous drain current of 97 A and a drain-source voltage capability of 100 V, this device supports robust and efficient operations in industrial, automotive, and power management systems.
The MOSFET features a surface-mount TDSON package with 8 pins that allows automated PCB assembly and effective thermal dissipation through optimized copper routing. It offers a low maximum drain-source resistance of 6 mΩ that minimizes conduction losses, improving overall system efficiency.
Designed to operate within a broad temperature range of -55°C to 175°C, the device ensures reliable performance across harsh and demanding environments. The typical gate charge of 33 nC allows designers to size gate drivers accurately for optimal switching speed and power loss management. The maximum gate-source voltage rating of 20 V provides protection from gate overvoltage events, enhancing device durability.
Infineon ISC MOSFETs are suitable for synchronous rectification in switching supplies, high-current motor drivers, power distribution circuits, and compact surface-mount power assemblies. This device is ideal for engineers seeking reliable, high-current switching components in industrial, commercial, and automotive systems.
Supports high-current switching with 97 A maximum continuous drain current. Operates at a maximum drain-source voltage of 100 V for robust power handling. Surface mount TDSON package with 8 pins eases PCB assembly and thermal management.
Maximum drain-source resistance of 6 mΩ reduces conduction losses effectively. Typical gate charge of 33 nC enables efficient gate drive design. Maximum power dissipation of 125 W supports sustained operation in demanding environments.
Wide operating temperature range from -55°C to 175°C for industrial reliability. Maximum gate-source voltage rating of 20 V protects against overdrive damage. Explore the complete range of Infineon power MOSFETs and semiconductor components on EnvMart for advanced industrial, laboratory, and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 97 A, allowing it to support high-current switching applications.
It operates at a maximum drain-source voltage of 100 V, which provides robust power handling capabilities.
This unit comes in a surface mount TDSON package with 8 pins, facilitating easy PCB assembly and effective thermal management.
The maximum power dissipation is rated at 125 W, supporting sustained operation in demanding environments.
The typical gate charge is 33 nC, which enables efficient gate drive design for optimal performance.
It features a maximum drain-source resistance of 6 mΩ, which effectively reduces conduction losses.
The operating temperature range is from -55°C to 175°C, ensuring reliability in industrial applications.
The maximum gate-source voltage rating is 20 V, providing protection against gate overdrive damage.
The dimensions of this model are 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height.
This device is suitable for applications such as synchronous rectification in switching supplies, high-current motor drivers, and power distribution circuits.
The country of origin for this MOSFET is India.
This model belongs to the ISC series of Infineon MOSFETs.
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