Infineon ISC N-Channel MOSFET 100 V 230 A 8-Pin SuperSO8 Surface Mount ISC022N10NM6ATMA1

Infineon ISC022N10NM6ATMA1 is a compact N-channel MOSFET designed for high-current, high-power switching applications. With a maximum drain-source voltage of 100 V and continuous drain current rating of 230 A, it is ideal for demanding industrial power stages.

This device is housed in an 8-pin SuperSO8 surface mount package measuring 5.1 mm in height and 6.1 mm in length, enabling compact PCB layouts. The low RDS(on) of 2.24 mΩ minimizes conduction losses, allowing efficient operation and improved thermal performance.

The MOSFET supports a maximum power dissipation of 245 W and can operate across an extended temperature range from -55°C up to 175°C, ensuring reliability in harsh industrial environments. Its typical gate charge of 91 nC enables efficient switching transitions, while the 20 V maximum gate-source voltage accommodates standard driver voltages.

The device features a forward voltage of 1 V, making it suitable for power stages in DC-DC converters, server and telecom power distribution modules, motor controllers requiring high continuous current, battery management systems, inverter power stages, and welding control applications.

The N-channel technology offers flexibility for both low-side and high-side switching configurations common in power electronics. Supports maximum continuous drain current of 230 A suitable for high current applications.

Rated for 100 V maximum drain-source voltage and 2.24 mΩ low on-resistance reduces conduction losses. 245 W maximum power dissipation enables sustained high power handling capability. Compact 8-pin SuperSO8 surface mount package measures 5 x 6 mm for space-efficient PCB design.

Operates reliably over a wide temperature range from -55°C to 175°C for industrial robustness. Typical gate charge of 91 nC facilitates fast and efficient switching performance. Maximum gate-source voltage rating of 20 V ensures compatibility with common driver circuits.

Forward voltage drop of 1 V under conduction minimizes power losses during operation. Designed for high power DC-DC converters, server power modules, motor controllers, and battery management systems. Offers N-channel polarity suitable for high-side and low-side switching topologies.

This MOSFET is a reliable choice for industrial, commercial, and telecommunications power electronics requiring high current, efficient switching, and robust thermal tolerance. Browse EnvMart’s wide range of Infineon semiconductor devices and MOSFETs for your electronic design needs.