$2.02
$1.96
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS N-Channel MOSFET, 11.4 A, 600 V Enhancement, 3-Pin TO-263 IPB65R310CFDAATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB65R310CFDAATMA1 |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.4A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 310mΩ |
| Channel Mode | Enhancement |
Key Features
- This MOSFET uses CoolMOS technology optimized for high voltage applications.
- It features low maximum drain-source resistance of 310 mΩ, enhancing efficiency.
- Designed as an enhancement mode N-channel device for reliable switching.
- Compact TO-263 package supports surface mount technology for PCB assembly.
- The device has a 3-pin configuration suitable for power regulation circuits.
- It is not automotive standard qualified but meets industrial semiconductor requirements.
- Ideal for power management in industrial and electronic electronic devices.
Product Description
Infineon's IPB65R310CFDAATMA1 is a CoolMOS N-Channel MOSFET designed with super junction technology to provide high efficiency and low conduction losses in high voltage applications up to 600 V. It delivers a maximum continuous drain current of 11.4 A with an impressively low maximum drain-source resistance of 310 mΩ for improved power performance.
The device uses an enhancement mode channel and features a 3-pin TO-263 surface mount package, ideal for compact and efficient PCB layouts. Its rugged construction and reliable switching performance suit it well for use in industrial electronics, power supplies, converters, and other electronic components requiring efficient high voltage switching.
This MOSFET does not carry automotive standard certification but complies with industrial semiconductor standards. Applications include power management circuits in consumer electronics, industrial machines, and electronic control systems.
This MOSFET employs CoolMOS technology for enhanced high voltage efficiency. N-channel enhancement behavior provides fast and reliable switching. Three-pin TO-263 package supports convenient surface mount soldering. Maximum drain-source voltage rating of 600 V enables a wide range of power applications.
Maximum continuous drain current of 11.4 A suits moderate power levels. Low Rds(on) of 310 mΩ minimizes power dissipation and heat generation. Designed for power electronics, industrial controls, and electronic devices.
Choose this Infineon CoolMOS MOSFET for dependable, efficient semiconductor switching in high voltage electronic designs. Explore more MOSFETs and semiconductor solutions at EnvMart to meet your power management needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 11.4 A.
This MOSFET has a maximum drain-source voltage rating of 600 V.
The maximum drain-source resistance (Rds(on)) is 310 mΩ, which helps minimize power dissipation.
It comes in a TO-263 package type, suitable for surface mount technology.
This model features an N-channel configuration, designed for enhancement mode operation.
No, this device is not automotive standard qualified, but it meets industrial semiconductor requirements.
It is designed for power management circuits in consumer electronics, industrial machines, and electronic control systems.
This model employs CoolMOS technology, optimized for high voltage applications to enhance efficiency.
The TO-263 package of this MOSFET has a 3-pin configuration.
The country of origin for this MOSFET is India.
This device is part of the CoolMOS series from Infineon.
It supports surface mounting, making it suitable for compact PCB layouts.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$3,845.15
$3,729.80
-3%
New
$2.02
$1.96
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent