Infineon CoolMOS CE N-Channel MOSFET, Surface Mount TO-252, 7.2 A, 650 V, 68W Power Dissipation IPD65R1K0CEAUMA1

Infineon IPD65R1K0CEAUMA1 CoolMOS CE N-Channel MOSFET is a high-performance power semiconductor device designed for high voltage and current switching applications. Utilizing Infineon’s innovative super junction CoolMOS CE technology, this device achieves superior switching speeds and ruggedness while maintaining low on-resistance for efficient operation.

This enhancement mode MOSFET is constructed with an N-channel type providing excellent conduction properties with a low maximum drain-source resistance of 1 ohm. It supports a continuous drain current rating of 7.2 amperes and can withstand voltages up to 650 volts, making it suitable for power management in industrial and electronic systems.

The device is housed in a compact, surface-mount TO-252 package with three pins, enabling easy integration onto printed circuit boards. Its typical gate charge of 15.3 nC allows for fast switching with reduced switching losses, and the forward voltage of 900 mV ensures efficient conduction with minimal power dissipation, rated at 68 watts maximum.

Designed for durability, it operates reliably within a wide temperature range from -55°C to 150°C. The maximum gate-source voltage is rated at 20 volts to maintain device safety and performance integrity. The rugged characteristics of the CoolMOS CE series ensure suitability for standard grade power electronic applications including power supplies, inverters, motor drives, and general electronic switching.

Infineon's CoolMOS CE MOSFETs combine ease of use, robustness, and cost-effectiveness, making the IPD65R1K0CEAUMA1 ideal for demanding industrial, manufacturing, HVAC, and laboratory electronic applications.

Operates with a maximum continuous drain current of 7.2 amperes. Supports a maximum drain-source voltage of 650 volts for high voltage applications. Features a typical gate charge of 15.3 nanoCoulombs at gate-source voltage.

Has a maximum power dissipation rating of 68 watts for robust thermal performance. Designed with a low on-resistance (1 ohm) to reduce conduction losses. Functions in enhancement mode with N-channel type for switching efficiency.

Operational temperature range extends from -55°C to 150°C ensuring wide usability. Equipped with a 3-pin configuration in a TO-252 package suitable for surface mounting PCB designs. Maximum gate-source voltage rating of 20 volts protects device integrity.

Forward voltage drop is approximately 900 millivolts for efficient conduction. Explore more high quality MOSFETs and power semiconductor devices from Infineon at EnvMart.