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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.35mm |
| Length | 6.65mm |
| Model | IPD80R1K4CEATMA1 |
| Width | 6.42mm |
| Mount Type | Surface |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.9A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon IPD80R1K4CEATMA1 CoolMOS CE N-Channel MOSFET is a high voltage, high-performance semiconductor component built for power switching applications. It offers a maximum continuous drain current of 3.9 A and withstands a drain to source voltage up to 800 V.
The surface-mount TO-252 package and 3-pin configuration allow for compact board layouts and straightforward integration into electronic circuits. The enhancement channel mode MOSFET provides efficient switching capabilities, making it suitable for industrial and commercial electronics.
Operating over a temperature range from -55°C to 150°C, this device supports reliable operation in challenging environments such as power supplies, motor drives, and power management circuits.
With a maximum power dissipation of 63 W and a forward voltage of 1.2 V, the MOSFET ensures efficient energy conversion and reduced losses. Its typical gate charge of 23 nC facilitates rapid switching performance, while the 20 V maximum gate source voltage offers design safety margins.
Compact dimensions of 2.35 mm height, 6.65 mm length, and 6.42 mm width enable flexible usage where board space is limited. The CoolMOS CE series design also prioritizes robustness and high efficiency, compatible with modern power electronic requirements.
This MOSFET features a surface mount type with 3 pins for efficient PCB integration. Its enhancement channel mode enables stable operation and high performance. Maximum power dissipation is rated at 63 W, supporting demanding applications.
Operating temperature range spans from -55°C to 150°C, allowing reliability in harsh environments. The device has a low forward voltage of 1.2 V for improved efficiency. Typical gate charge is 23 nC at Vgs, optimizing switching performance.
The maximum gate source voltage is 20 V, ensuring robust operation within limits. Dimensionally compact with height 2.35 mm, length 6.65 mm, and width 6.42 mm for space-saving designs. This CoolMOS CE series device is RoHS compliant and designed for power electronic applications.
This MOSFET is ideal for use in industrial power supplies, motor drives, automotive electronics, HVAC systems, and other electronic control systems requiring reliable high voltage switching components.
Browse more power semiconductor components and high-efficiency MOSFETs in EnvMart’s Electronics & Electricals category for leading brands and latest technology products.
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