Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon CoolMOS CE N-Channel MOSFET, 3.9 A Continuous Drain Current, 800 V Maximum Drain Source Voltage IPD80R1K4CEATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.35mm
Length 6.65mm
Model IPD80R1K4CEATMA1
Width 6.42mm
Mount Type Surface
Series CoolMOS CE
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 3.9A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 1.4Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 63W
Typical Gate Charge Qg @ Vgs 23nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features a surface mount type with 3 pins for efficient PCB integration.
  • Its enhancement channel mode enables stable operation and high performance.
  • Maximum power dissipation is rated at 63 W, supporting demanding applications.
  • Operating temperature range spans from -55°C to 150°C, allowing reliability in harsh environments.
  • The device has a low forward voltage of 1.2 V for improved efficiency.
  • Typical gate charge is 23 nC at Vgs, optimizing switching performance.
  • The maximum gate source voltage is 20 V, ensuring robust operation within limits.
  • Dimensionally compact with height 2.35 mm, length 6.65 mm, and width 6.42 mm for space-saving designs.

Product Description

Infineon IPD80R1K4CEATMA1 CoolMOS CE N-Channel MOSFET is a high voltage, high-performance semiconductor component built for power switching applications. It offers a maximum continuous drain current of 3.9 A and withstands a drain to source voltage up to 800 V.

The surface-mount TO-252 package and 3-pin configuration allow for compact board layouts and straightforward integration into electronic circuits. The enhancement channel mode MOSFET provides efficient switching capabilities, making it suitable for industrial and commercial electronics.

Operating over a temperature range from -55°C to 150°C, this device supports reliable operation in challenging environments such as power supplies, motor drives, and power management circuits.

With a maximum power dissipation of 63 W and a forward voltage of 1.2 V, the MOSFET ensures efficient energy conversion and reduced losses. Its typical gate charge of 23 nC facilitates rapid switching performance, while the 20 V maximum gate source voltage offers design safety margins.

Compact dimensions of 2.35 mm height, 6.65 mm length, and 6.42 mm width enable flexible usage where board space is limited. The CoolMOS CE series design also prioritizes robustness and high efficiency, compatible with modern power electronic requirements.

This MOSFET features a surface mount type with 3 pins for efficient PCB integration. Its enhancement channel mode enables stable operation and high performance. Maximum power dissipation is rated at 63 W, supporting demanding applications.

Operating temperature range spans from -55°C to 150°C, allowing reliability in harsh environments. The device has a low forward voltage of 1.2 V for improved efficiency. Typical gate charge is 23 nC at Vgs, optimizing switching performance.

The maximum gate source voltage is 20 V, ensuring robust operation within limits. Dimensionally compact with height 2.35 mm, length 6.65 mm, and width 6.42 mm for space-saving designs. This CoolMOS CE series device is RoHS compliant and designed for power electronic applications.

This MOSFET is ideal for use in industrial power supplies, motor drives, automotive electronics, HVAC systems, and other electronic control systems requiring reliable high voltage switching components.

Browse more power semiconductor components and high-efficiency MOSFETs in EnvMart’s Electronics & Electricals category for leading brands and latest technology products.

Infineon CoolMOS CE N-Channel MOSFET, 3.9 A Continuous Drain Current, 800 V Maximum Drain Source Voltage IPD80R1K4CEATMA1
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 3.9 A.

It can withstand a maximum drain-source voltage of 800 V.

The operating temperature range spans from -55°C to 150°C.

The maximum power dissipation is rated at 63 W.

The dimensions are 2.35 mm in height, 6.65 mm in length, and 6.42 mm in width.

The typical gate charge is 23 nC at Vgs.

The maximum gate-source voltage is 20 V.

This MOSFET utilizes an enhancement channel type.

The surface mount package has 3 pins.

The forward voltage is rated at 1.2 V.

It is typically used in industrial power supplies, motor drives, automotive electronics, and HVAC systems.

The country of origin for this MOSFET is India.

Related Products

Other Products from this brand

Recently Viewed Products

$0.91
$0.88 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.91
$0.88
Tax included