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Infineon HEXFET N-Channel MOSFET 240A, 55V, 7-Pin TO-263 IRF3805STRL-7PP
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF3805STRL-7PP |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 240A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 2.6mΩ |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 200nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 240 amperes ensures robust performance.
- Operates at a maximum drain-source voltage of 55 volts.
- Features a 7-pin TO-263 surface mount package suitable for compact PCB designs.
- Low on-resistance of 2.6 milliohms minimizes power losses.
- Designed for fast switching with a typical gate charge of 200 nanocoulombs.
- Supports a maximum power dissipation rating of 300 watts.
- Operates efficiently within a temperature range from -55°C to 175°C.
- Maximum gate-source voltage rating of ±20 volts provides stable gate control.
Product Description
Infineon IRF3805STRL-7PP HEXFET N-Channel MOSFET is engineered to deliver exceptional electrical performance for demanding power applications. This device supports a continuous drain current of up to 240 amperes and a maximum drain-source voltage of 55 volts, making it ideal for power switching and control circuits.
The TO-263 7-pin surface mount package enables compact layouts while maintaining efficient thermal management. The low on-resistance of 2.6 milliohms significantly reduces conduction losses, enhancing overall circuit efficiency.
Featuring a typical gate charge of 200 nanocoulombs, this MOSFET provides fast switching capabilities suitable for high-frequency circuits. Its maximum power dissipation of 300 watts allows it to handle substantial power loads in industrial and electronic applications.
The device is rated for operation from -55°C to 175°C, ensuring reliable performance across harsh environments. The ±20 volts maximum gate-source voltage rating protects the device during gate drive operation.
Its lead-free design complies with environmental standards, supporting eco-friendly manufacturing practices. 240A continuous drain current. 55V maximum drain-source voltage. 7-pin TO-263 surface mount package. Low on-resistance (2.6mΩ).
Fast switching with 200nC typical gate charge. 300W power dissipation capability.
This MOSFET is widely used in industrial power supplies, electronic circuits, and power management modules. For further designs, engineering resources such as technical documents and design software are available.
Explore EnvMart's extensive semiconductor category for compatible power components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 240 amperes.
It operates at a maximum drain-source voltage of 55 volts.
This MOSFET comes in a 7-pin TO-263 surface mount package.
The on-resistance is 2.6 milliohms, which helps minimize power losses.
It has a typical gate charge of 200 nanocoulombs, suitable for fast switching applications.
The maximum power dissipation rating for this device is 300 watts.
It operates efficiently within a temperature range from -55°C to 175°C.
The maximum gate-source voltage rating is ±20 volts, providing stable gate control.
This model features an N-channel configuration.
This MOSFET is widely used in industrial power supplies, electronic circuits, and power management modules.
The country of origin for this MOSFET is India.
It belongs to the HEXFET series, known for its high performance in power applications.
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