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Infineon Dual N Channel MOSFET HEXFET 5.1 A, 55 V Enhancement, SO-8 Package IRF7341GTRPBF

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Infineon Dual N Channel MOSFET HEXFET 5.1 A, 55 V Enhancement, SO-8 Package IRF7341GTRPBF

Name: Infineon Dual N Channel MOSFET HEXFET 5.1 A, 55 V Enhancement, SO-8 Package IRF7341GTRPBF
Brand: Infineon
SKU: 110587
Price: 1.13 USD
Availability: InStock

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Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.5mm
Length	5mm
Model	IRF7341GTRPBF
Width	4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	SO-8
Minimum Operating Temperature	-55°C
Pin Count	8
Number of Elements per Chip	2
Channel Type	Type N
Maximum Continuous Drain Current Id	5.1A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	65mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.4W
Typical Gate Charge Qg @ Vgs	29nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V
Transistor Configuration	Dual N Channel Mosfet

Key Features

Advanced HEXFET technology ensures ultra low on-resistance.
Dual N channel transistor configuration with enhancement mode operation.
Maximum power dissipation of 2.4 watts supports robust performance.
Operates reliably at high junction temperatures up to 175°C.
Compact SO-8 surface mount package saves PCB space.
Typical gate charge of 29 nC for efficient switching.
Maximum gate-source voltage rating of ±20 V protects against overdrive.
Features fast switching speed and improved avalanche tolerance.

Product Description

Infineon IRF7341GTRPBF is a dual N-channel MOSFET built using advanced HEXFET power transistor technology. This component is offered in a compact SO-8 surface mount package with 8 pins, designed for mounting on printed circuit boards where space efficiency and performance are critical.

Providing a maximum continuous drain current of 5.1 amperes and a drain-source voltage rating of 55 volts, this MOSFET supports efficient switching and power handling in a variety of electronic applications. The device operates in enhancement mode and features an ultra-low on-resistance of 65 milliohms, optimizing power efficiency and thermal management.

Its rugged design includes a maximum operating junction temperature of 175°C, enabling reliable function under demanding thermal conditions. The typical gate charge at 4.5 V gate drive voltage is 29 nanocoulombs, which contributes to fast switching speeds and reduced power loss during operation.

Additional attributes include a maximum power dissipation of 2.4 watts and a maximum forward voltage of 1.2 volts. The device does not have specific automotive standards certification but is suitable for various industrial, power management, and consumer electronics uses.

Its dual transistor structure allows for efficient paired use in power switching circuits, motor control, and voltage regulation. The SO-8 package with dimensions approximately 5 mm length, 4 mm width, and 1.5 mm height conserves PCB footprint while supporting robust electrical performance.

Advanced HEXFET power MOSFET technology. Dual N-channel configuration in surface mount SO-8 package. Low Rds(on) of 65 mΩ for high efficiency. High temperature rating up to 175°C for reliability. Fast switching speeds with typical gate charge of 29 nC.

Maximum power dissipation of 2.4 W. Maximum gate-source voltage ±20 V. Applications include power supplies, motor controllers, and general power management.

Explore the Infineon products and semiconductor components category at EnvMart for a comprehensive selection of power MOSFETs and related parts designed for industrial, automotive, and consumer electronics applications.

Explore more products in our Discrete Semiconductor category.